A memory device includes a first memory block. The first memory block includes a first memory sub-array and a first interface portion disposed next to the first memory sub-array. The first interface portion has a plurality of first control structures formed as a first staircase profile. The first memory block further includes a plurality of first interconnect structures landing on a corresponding one of the plurality of first control structures, and a plurality of second interconnect structures configured to electrically couple a corresponding one of the plurality of first interconnect structures to a first transistor. The memory device further includes a first test structure and a second test structure disposed next to the first memory block, each configured to simulate electrical connections of the plurality of second interconnect structures. The first and second test structures are electrically coupled to each other and are electrically isolated form the first memory block.

A system includes a memory device to maintain data for a machine learning operation. The memory device includes solder balls. The system further includes a machine learning processing device to perform the machine learning operation. The system further includes a processing device to select, based on the machine learning operation, a set of solder balls from the plurality of solder balls to transmit the data from the non-volatile memory device to the machine learning processing device.

Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.

A memory device includes a plurality of memory sub-arrays. Each of the memory sub-arrays is accessed through a staircase of word lines (WLs) and a plurality of interconnect structures. The memory device includes a plurality of test structures. Each of the test structures corresponds to one of the memory sub-arrays, and includes: (i) a staircase of test WLs that emulate the staircase of WLs coupled to the corresponding memory sub-array, and (ii) a plurality of test interconnect structures that emulate the interconnect structures coupled to the corresponding memory sub-array. The plurality of test structures are electrically coupled to one another in series.

A chip testing apparatus and system suitable for performing testing on multiple chips in a chip cluster are provided. The chip testing apparatus includes a signal interface and a test design circuit. The signal interface transmits an input signal and multiple driving signals in parallel from a test equipment to each of the chips. The test design circuit receives multiple output signals from the chips through the signal interface and serially outputs a test data to the test equipment according to the output signals.

A control system, that includes a primary controller and various auxiliary controllers, is configured to facilitate a built-in self-test (BIST) of a system-on-chip (SoC). The primary controller is configured to initiate a BIST sequence associated with the SoC. Based on the BIST sequence initiation, each auxiliary controller is configured to schedule execution of various self-test operations on various functional circuits, various memories, and various logic circuits of the SoC by various functional BIST controllers, various memory BIST controllers, and various logic BIST controllers of the SoC, respectively. Based on the execution of the self-test operations, each auxiliary controller further generates various status bits with each status bit indicating whether at least one functional circuit, at least one memory, or at least one logic circuit is faulty. Based on the status bits generated by each auxiliary controller, a fault diagnosis of the SoC is initiated.

A memory is provided. The memory includes: a control chip; and a plurality of storage chips, in which the plurality of storage chips are electrically connected with the control chip via a common communication channel, the plurality of storage chips are configured to perform information interaction with the control chip by adopting different clock edges of a first clock signal, the first clock signal has a first clock cycle, the different clock edges include two consecutive rising edges and/or two consecutive falling edges, the plurality of storage chips are further configured to receive a second clock signal and distinguish the different clock edges based on the second clock signal, and a second clock cycle of the second clock signal is greater than the first clock cycle.

A system and method of storing and reading digital data, including providing a nanopore polymer memory (NPM) device having at least one memory cell comprising at least two addition chambers each arranged to add a unique chemical construct (or codes) to a polymer (or DNA) string when the polymer enters the respective addition chamber, the data comprising a series of codes; successively steering the polymer from deblock chambers through the nanopore into the addition chambers to add codes to the polymer to create the digital data pattern on the polymer; and accurately controlling the bit rate of the polymer using a servo controller. The device may have loading chamber(s) to load (or remove) the polymer into/from the deblock chambers through at least one “micro-hole”. The cell may be part of a memory system that stores and retrieves “raw” data and allows for remote retrieval and conversion. The cell may store multi-bit data having a plurality of states for the codes.

Apparatus and methods are disclosed, including memory devices and systems. In an example, a memory module can include a first stack of at least eight memory die including four pairs of memory die, each pair of the four pairs of memory die associated with an individual memory rank of four memory ranks of the memory module, a memory controller configured to receive memory access commands and to access memory locations of the first stack, and a substrate configured to route connections between external terminations of the memory module and the memory controller.

A semiconductor integrated circuit includes a write test circuit and a read test circuit. The write test circuit generates test data and transmits the generated test data to an external memory device without storing the test data in a local memory device. The read test circuit receives from the external memory device, read data that the external memory device has obtained by reading the test data, and compares the received read data with an expected value without storing either the read data or the expected value in the local memory device.