Apparatuses and techniques are described for obtaining a threshold voltage distribution for a set of memory cells based on a user read mode. The user read mode can be based on various factors including a coding of a page and an increasing or decreasing order of the read voltages. The read process for the Vth distribution is made to mimic the read mode which is used when the memory device is in the hands of the end user. This results in a Vth distribution which reflects the user's experience to facilitate troubleshooting. In some cases, one or more dummy read operations are performed, where the read result is discarded, prior to a read operation which is used to build the Vth distribution.

Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.

A memory circuit which includes: A synchronous memory cell array, configured to receive a clock signal and having address lines and bit lines. A margin agent, determining a status of the synchronous memory cell array based on a time duration between a transition of the clock signal and a change on a signal derived from a bit line due to a signaling on at least one of the address lines. In another aspect, a memory cell, having a bit line configured to provide data input/output to the memory cell may be provided with a comparator, comparing a voltage on the bit line with a reference voltage and indicating of a status of the memory cell thereby. Firmware may receive the indication of the status of a memory cell array, and transmit the indication, issue an alert, and/or reconfigure the memory circuit responsive to the status.

A memory circuit which includes: A synchronous memory cell array, configured to receive a clock signal and having address lines and bit lines. A margin agent, determining a status of the synchronous memory cell array based on a time duration between a transition of the clock signal and a change on a signal derived from a bit line due to a signaling on at least one of the address lines. In another aspect, a memory cell, having a bit line configured to provide data input/output to the memory cell may be provided with a comparator, comparing a voltage on the bit line with a reference voltage and indicating of a status of the memory cell thereby. Firmware may receive the indication of the status of a memory cell array, and transmit the indication, issue an alert, and/or reconfigure the memory circuit responsive to the status.

Described screenshot verification systems and methods for automatically verifying the integrity of a backup image or other process-of-interest using a screenshot verification system, as well as disaster recovery systems including said systems and performing said methods. In accordance with various aspects of the present disclosure, a virtual machine is booted and screenshots of the boot process are taken, which are used by a trained model, such as a convolutional neural network, to determine a boot state consistency. The systems and methods described deliver over 99% accuracy and do not involve regular expression analysis typical of conventional methods.

Described screenshot verification systems and methods for automatically verifying the integrity of a backup image or other process-of-interest using a screenshot verification system, as well as disaster recovery systems including said systems and performing said methods. In accordance with various aspects of the present disclosure, a virtual machine is booted and screenshots of the boot process are taken, which are used by a trained model, such as a convolutional neural network, to determine a boot state consistency. The systems and methods described deliver over 99% accuracy and do not involve regular expression analysis typical of conventional methods.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

The present disclosure provides a method, device and system for testing memory devices. The testing method includes: receiving a test instruction, the test instruction being used to characterize a model of a memory device to be tested that is connected to a test platform; selecting, according to the test instruction, a testing method corresponding to the model of the memory device to be tested from a plurality of pre-stored testing methods as a target testing method; and executing the target testing method to test the memory device to be tested.

A method and a device for memory testing, and a computer-readable storage medium are provided. In the method, an instruction signal is sent to the memory, the instruction signal comprising a randomly generated write instruction or read instruction; a valid Column Address Strobe (CAS) instruction for ensuring running of the instruction signal is randomly inserted before the instruction signal by detecting a specific type of the instruction signal, and at least one of a redundant CAS instruction or invalid command irrelevant to the instruction signal is randomly generated and inserted; and the memory is enabled to run the instruction signal, the inserted valid CAS instruction, and the at least one of the redundant CAS instruction or the invalid command, and the running of the memory is tested.