An integrated circuit (IC) includes first and scan latches that are enabled to load data during a first part of a clock period. A clocking circuit outputs latch clocks with one latch clock driven to an active state during a second part of the clock period dependent on a first address input. A set of storage elements have inputs coupled to the output of the first scan latch and are respectively coupled to a latch clock to load data during a time that their respective latch clock is in an active state. A selector circuit is coupled to outputs of the first set of storage elements and outputs a value from one output based on a second address input. The second scan latch then loads data from the selector's output during the first part of the input clock period.

An aspect of the disclosure relates to a latch array, including: a first set of master latches including a first set of clock inputs configured to receive a master clock, a first set of data inputs configured to receive a first set of data, and a first set of data outputs coupled to a set of bitlines, respectively; a second set of master latches including a second set of clock inputs configured to receive the master clock, a first set of write-bit inputs configured to receive a set of write-bit signals, and a set of write-bit outputs coupled to a set of write-bit lines, respectively; and an array of slave latches, wherein the slave latches in columns of the array include a second set of data inputs coupled to the set of bitlines, and a second set of write-bit inputs coupled to the set of write-bit lines, respectively.

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.

A register file module comprising at least one register array comprising a plurality of latch devices is described. The plurality of latch devices is arranged to individually provide memory bit-cells when the register file module is configured to operate in a first, functional operating mode, and at least one clock control component is arranged to receive a clock signal and to propagate the clock signal to the latch devices within the at least one register array. The register file module is configurable to operate in a second, scan mode in which the latch devices within the at least one register array are arranged into at least one scan chain. The at least one clock control component is arranged to propagate the clock signal to the latch devices within the at least one register array such that alternate latch devices within the at least one scan chain receive an inverted form of the clock signal.

A memory device with a novel structure that is suitable for a register file is provided. The memory device includes a first memory circuit and a second memory circuit. The first memory circuit includes a first logic element and a second logic element each of which is configured to perform logic inversion, a selection circuit, a first switch, a second switch, and a third switch. The second memory circuit includes a first transistor in which a channel formation region is provided in an oxide semiconductor film, a second transistor, and a capacitor to which a potential is supplied through the first transistor.

A register file includes a substrate, a plurality of entries, and a plurality of read ports. Each entry includes a corresponding subset of a plurality of memory cells defined on the substrate. Each read port includes a plurality of access elements defined on the substrate. Each access element is associated with a particular common bit position of each of the entries. A plurality of entry access groups are disposed in adjacent columns on the substrate. Each entry access group is associated with a corresponding one of the plurality of entries and includes the access elements for all of the read ports for the corresponding entry.

A device includes an AND logic gate and a D latch. The AND logic gate includes a first input configured to be coupled to a third-party device to receive a selection signal, a second input configured to be coupled to the third-party device to receive a status signal, and an output configured to transmit an output signal when the selection signal and the status signal are received. The D latch is capable of storing datum. The D latch includes an activation input coupled to the output of the AND logic gate and a data input configured to be coupled to the third-party device to receive a data signal that is representative of the datum. The D latch is configured to store the datum in response to the output signal.

An integrated circuit device includes a shuffler, a logic unit and registers each including two or more bit storages. The shuffler receives an address indicating one of the registers and data bits, selects target bit storages at which the data bits are to be stored from among bit storages of the registers depending on a shuffle configuration and the address, stores the data bits into the target bit storages, and transfers the data bits from the target bit storages depending on the shuffle configuration. The logic unit receives the data bits transferred from the shuffler and operates using the received data bits. The shuffle configuration is adjusted when a reset operation is performed.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.