An embodiment method for managing an operation for modifying the content of the memory plane of a memory device coupled to a processing unit, comprises a communication by the processing unit to the memory device of a control of the operation, an execution of the operation by the memory device, and at the end of the operation, a communication by the memory device itself to the processing unit of information indicating the end of the operation.

A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Various implementations described herein are directed to a device having memory control circuitry having global passgates and a read-write driver that provides a global read-write signal to the global passgates. The device may have sense amplifier circuitry with local-drivers and a sense amplifier driver that provides a sense amplifier enable signal to the local-drivers, wherein the local-drivers may include multiple buffers coupled to the sense amplifier driver in parallel.

Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.

The present description concerns a memory device (200) including a non-volatile memory circuit (101); a buffer memory circuit (203) comprising a volatile memory circuit (221); an input-output circuit (105); a first data link (104) coupling the non-volatile memory circuit (101) to the buffer memory circuit (203); a second data link (106) coupling the buffer memory circuit (203) to the input-output circuit (105); and a control circuit (225), wherein the buffer memory circuit (203) is adapted to implementing calculations having as operands data stored in the volatile memory circuit (221).

A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.

A semiconductor memory includes storage arrays, at least one verification module and gating circuits. Each verification module corresponds to multiple storage arrays. The verification module is configured to verify whether an error occurs in data information of the corresponding storage arrays. Each verification module is connected to a group of global data buses. The gating circuits are respectively connected to the storage arrays and the global data buses, and the gating circuits are configured to control on and off of a data transmission path connecting the global data buses to the storage arrays.

Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.

A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.