A semiconductor memory includes storage arrays, at least one verification module and gating circuits. Each verification module corresponds to multiple storage arrays. The verification module is configured to verify whether an error occurs in data information of the corresponding storage arrays. Each verification module is connected to a group of global data buses. The gating circuits are respectively connected to the storage arrays and the global data buses, and the gating circuits are configured to control on and off of a data transmission path connecting the global data buses to the storage arrays.

Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during multiple communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication and instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The device may receive a second command instructing the first portion to perform a second communication, and the device may perform, with the first portion, the second communication while the second portion remains in the ODT mode. The second portion may persist in the ODT mode for an indicated number of communications, or until instructed to exit the ODT mode.

An embodiment method for managing an operation for modifying the content of the memory plane of a memory device coupled to a processing unit, comprises a communication by the processing unit to the memory device of a control of the operation, an execution of the operation by the memory device, and at the end of the operation, a communication by the memory device itself to the processing unit of information indicating the end of the operation.

The present disclosure includes apparatuses and methods for data movement. An example apparatus comprises a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes a sense amplifier and a compute component coupled to a sense line and configured to implement operations. A controller in the memory device is configured to couple to the array and sensing circuitry. A shared I/O line in the memory device is configured to couple a source location to a destination location.

A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Embodiments of the present disclosure relate to a memory system and a memory controller, in which data input/output terminals in different data input/output terminal groups corresponding to different channels may be arranged adjacent to each other, thereby preventing skew of a signal occurring during data input/output operations and interference between different signals and reducing the cost required for implementing the memory system.

Various implementations described herein are directed to a device having memory control circuitry having global passgates and a read-write driver that provides a global read-write signal to the global passgates. The device may have sense amplifier circuitry with local-drivers and a sense amplifier driver that provides a sense amplifier enable signal to the local-drivers, wherein the local-drivers may include multiple buffers coupled to the sense amplifier driver in parallel.

A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.

A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.

A high-bandwidth dual-inline memory module (HB-DIMM) includes a plurality of memory chips, a plurality of data buffer chips, and a register clock driver (RCD) circuit. The data buffer chips are coupled to respective sets of the memory chips and transmit data from the memory chips over a host bus at a data rate twice that of the memory chips. The RCD circuit includes a host bus interface and a memory interface coupled to the plurality of memory chips. The RCD circuit implements commands received over the host bus by routing command/address (C/A) signals to the memory chips for providing at least two independently addressable pseudo-channels, the RCD circuit addressing each respective pseudo-channel based on a chip identifier (CID) bit derived from the C/A signals.