A memory device includes a first memory array, a second memory array, and a page cache circuit coupled to the first memory array and the second memory array. The page cache circuit includes at least one set of concurrent resources and at least one shared resource, wherein the at least one set of concurrent resources are asynchronously and concurrently accessible by the first memory array and the second memory array, and wherein the at least one shared resource is accessible in a time-multiplexed fashion by the first memory array and the second memory array.

A memory device comprising a plurality of memory cells situated in a first cell field, multiple first bit lines, each respectively connected to multiple memory cells of the first cell field to enable access to the memory cells via the bit line, and multiple sense amplifier pairs which respectively comprise a first and a second sense amplifier. Each first bit line is assigned to a sense amplifier pair, each first bit line being connected to a respective first semiconductor switch element, through which the bit line is electroconductively connectible to and insulatable from the first sense amplifier of the sense amplifier pair, to which the bit line is assigned. Each first bit line is connected to a respective second semiconductor switch element, through which the bit line is electroconductively connectible to and insulatable from the second sense amplifier of the sense amplifier pair, to which the bit line is assigned.

A device includes a section signal generation circuit configured to generate a section signal including bits activated during an operation section of each of internal operations included in a mode operation, and a mode command generation circuit configured to generate a mode command for performing the internal operations included in the mode operation from an oscillating signal, based on the section signal.

Provided are an apparatus, a memory device, and a method for multi-phase clock training. The memory device includes a clock training circuit configured to receive a clock through a first signal pin, among a plurality of signal pins and connected to a first signal line connected to the first signal pin. The clock training circuit generates a multi-phase clock upon receiving the clock, and generates a three-dimensional (3-D) duty offset code (DOC) for the multi-phase clock by simultaneously phase-sweeping between three internal clock signals in a duty adjustment step in the multi-phase clock. The memory device corrects a duty error of the multi-phase clock using the 3-D DOC.

A device includes a section signal generation circuit configured to generate a section signal including bits activated during an operation section of each of internal operations included in a mode operation, and a mode command generation circuit configured to generate a mode command for performing the internal operations included in the mode operation from an oscillating signal, based on the section signal.

In some examples, a fluid dispensing device component includes an input to receive a control signal from the fluid dispensing system, the control signal for activating the fluidic actuators of the fluid dispensing device during a fluidic operation mode. The fluid dispensing device component includes a nonvolatile memory, and a controller to, during a memory write mode, write a first portion of the nonvolatile memory to a first programmed level responsive to the control signal being activated for a first time duration, and write a second portion of the nonvolatile memory to a second programmed level responsive to the control signal being activated for a second time duration different from the first time duration, the second programmed level being different from the first programmed level.

A memory system is disclosed in the present disclosure. The memory system may include at least one first type of memory configured on at least one first rank and to operate at a first frequency, and at least one second type of memory configured on at least one second rank and to operate at a second frequency. The memory system may also include a physical block (PHY) configured to generate a first clock at the first frequency and a second clock at the second frequency.

In some examples, a fluid dispensing device component includes an input to receive a control signal from the fluid dispensing system, the control signal for activating the fluidic actuators of the fluid dispensing device during a fluidic operation mode. The fluid dispensing device component includes a nonvolatile memory, and a controller to, during a memory write mode, write a first portion of the nonvolatile memory to a first programmed level responsive to the control signal being activated for a first time duration, and write a second portion of the nonvolatile memory to a second programmed level responsive to the control signal being activated for a second time duration different from the first time duration, the second programmed level being different from the first programmed level.

A memory system is disclosed in the present disclosure. The memory system may include at least one first type of memory configured on at least one first rank and to operate at a first frequency, and at least one second type of memory configured on at least one second rank and to operate at a second frequency. The memory system may also include a physical block (PHY) configured to generate a first clock at the first frequency and a second clock at the second frequency.

Methods, apparatuses, and systems related to scheduling internal operations are described. An apparatus detects a condition associated with repeated accesses to a memory address and/or region. In response to detection of the condition, the apparatus generates a scheduling output that secures a scheduled duration of inactivity for commanded operations. The apparatus initiates execution of one or more internal operations during the scheduled duration.