An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a memory cell array having a mat having a plurality of row sections that each include respective prime memory cell rows and a respective redundant memory cell row. The example apparatus may further include a row decoder configured to receive an access command and a prime row address. The row decoder may be configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections.

A memory device according to the present invention may comprise: a memory cell array in which memory cells are connected in matrix form to word lines and bit lines; a plurality of mergers connected in series to transfer data that is read from a selected memory cell among the memory cells included in the memory cell array and is transformed into one of a direct current form or a pulse form; and a sorter that synchronizes an edge of first output data, output by one of the plurality of mergers, with an edge of a control pulse, thereby delaying the edge of the first output data. First data, which is either data bit “0” or data bit “1”, can be input to the mergers in the form of a direct current of first logic, and second data, which is another piece of data, can be input to the mergers in the form of a pulse that changes from the first logic to the second logic and back to the first logic. When the first data is input, the sorter can allow the first data to pass as-is and output the first data as second output data in the form of a direct current of the first logic. When a first edge that changes from the second logic to the first logic is input, the sorter can delay the first edge by synchronizing the same with a rising edge or falling edge of the control pulse, and output the first edge as the second output data.

A method for operating a Near Memory Processing (NMP) Dual In-line Memory Module (DIMM) for DIMM-to-DIMM communication is provided. The NMP DIMM includes one or more ports for communicative connection to other NMP DIMMs. The method includes parsing, by one NMP DIMM, a NMP command received from a processor of a host platform, identifying data dependencies on one or more other NMP DIMMs based on the parsing, establishing communication with the one or more other NMP DIMMs through one or more ports of the one NMP DIMM, receiving data from the one or more other NMP DIMMs through one or more ports of the one NMP DIMM, processing the NMP command using the data received from one of the one or more other NMP DIMMs and data present in the one NMP DIMM, and sending a NMP command completion notification to the processor of the host platform.

An electronic device includes an enable signal generation circuit configured to activate, when a write operation is performed, a termination enable signal earlier than a time point when a write latency elapses, by a duration amount of an entry offset period; and a data input and output circuit configured to receive, when the write operation is performed, data later than the time point when the write latency elapses, based on the termination enable signal, wherein the data input and output circuit receives the data after the write latency elapses by a duration amount of a first data reception delay period.

Examples describe a duty cycle correction circuit for correcting duty cycle distortion from memory. One example is an integrated circuit for correcting an input clock signal. The integrated circuit includes a first leg circuit and a second leg circuit. The first leg circuit and the second leg circuit both comprise a charging circuit and a discharging circuit. Each charging circuit comprises a first plurality of transistors and each discharging circuit comprises a second plurality of transistors. The charging circuit is coupled to the discharging circuit in series. A number of transistors of the first plurality of transistors in the first leg circuit is different from a number of transistors of the first plurality of transistors in the second leg circuit.

An electronic device includes an enable signal generation circuit configured to activate, when a write operation is performed, a termination enable signal earlier than a time point when a write latency elapses, by a duration amount of an entry offset period; and a data input and output circuit configured to receive, when the write operation is performed, data later than the time point when the write latency elapses, based on the termination enable signal, wherein the data input and output circuit receives the data after the write latency elapses by a duration amount of a first data reception delay period.

A clock signal delay path unit includes a first delay cell including a first root signal line for delaying and transmitting a clock signal, a first repeater to transmit the clock signal transmitted through the first root signal line without signal attenuation, and a second root signal line for delaying and transmitting the clock signal output from the first repeater, a second delay cell including a first inverting circuit configured to invert the clock signal provided from the first delay cell to generate an inverted clock signal, and a third delay cell including a first branch signal line for delaying and transmitting the inverted clock signal provided from the second delay cell, a second repeater to transmit the inverted clock signal transmitted through the first branch signal line, and a second branch signal line for delaying and transmitting the inverted clock signal output from the second repeater.

Methods, apparatuses, and systems related to coordinating a set of timing-critical operations across parallel processing pipelines are described. The coordination may include selectively using (1) circuitry associated with a corresponding pipeline to generate enable signals associated with the timing critical operations when a separation between the operations corresponds to a number of pipelines or (2) circuitry associated with a non-corresponding or another pipeline when the separation is not a factor of the number of pipelines.

Methods, systems, and devices for signal development caching in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). In various examples, accessing the memory device may include accessing information from the signal development cache, or the memory array, or both, based on various mappings or operations of the memory device.

A computer system based on wafer-on-wafer architecture is provided, comprising a memory device and a logic circuit layer stacked in a wafer on wafer structural configuration. The memory device comprises a memory array and a circuit driver. The memory array comprises a shared circuit path and a plurality of memory cells, wherein the shared circuit path is connected to the memory cells. The circuit driver is connected to the shared circuit path, driving the memory cells. The logic circuit layer comprises a plurality of bounding pads for signal transmission, and a latency controller, connected to the memory array through the bounding pads, adjusting the number of memory cells connecting the shared circuit path, thereby dynamically adjusting the latency characteristics of the memory array. Embodiments of the memory device and the memory control method are also provided.