Provided is a storage device that includes a plurality of first wiring lines including a plurality of first and second selection lines, a plurality of second wiring lines including a plurality of third and fourth selection lines, a first selection line driver that applies a first voltage and a second voltage to one or more selection lines of the plurality of first and second selection lines respectively, the first voltage and the second voltage being one of a first and a second selection voltage, and the first and the second voltage are different, and a second selection line driver that applies a third voltage and a fourth voltage to one or more selection lines of the plurality of third and fourth selection lines respectively, the third voltage and the fourth voltage being one of the first and the second selection voltage, and the third and the fourth voltage being different.

A storage device according to the present disclosure includes: a first storage section that includes a plurality of first wiring lines, a plurality of second wiring lines, and a plurality of first memory cells, the plurality of first wiring lines extending in a first direction and including a plurality of first selection lines and a plurality of second selection lines, the plurality of second wiring lines extending in a second direction and including a plurality of third selection lines and a plurality of fourth selection lines; a first selection line driver that applies a first voltage to one or more selection lines of the plurality of first selection lines and applies a second voltage to one or more selection lines of the plurality of second selection lines, the first voltage being one of a first selection voltage and a second selection voltage, and the second voltage being one of the first selection voltage and the second selection voltage and being different from the first voltage; and a second selection line driver that applies a third voltage to one or more selection lines of the plurality of third selection lines and applies a fourth voltage to one or more selection lines of the plurality of fourth selection lines, the third voltage being one of the first selection voltage and the second selection voltage, and the fourth voltage being one of the first selection voltage and the second selection voltage and being different from the third voltage.

Integrated circuits with programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive elements connected in series and a programming transistor. The programmable resistive switch elements may be configured in a crossbar array and may be interposed within the user data path. Driver circuits may also be included for selectively turning on or turning off the switches by applying positive and optionally negative voltages.

Integrated circuits with programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive elements connected in series and a programming transistor. The programmable resistive switch elements may be configured in a crossbar array and may be interposed within the user data path. Driver circuits may also be included for selectively turning on or turning off the switches by applying positive and optionally negative voltages.

Integrated circuits with programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive elements connected in series and a programming transistor. The programmable resistive switch elements may be configured in a crossbar array and may be interposed within the user data path. Driver circuits may also be included for selectively turning on or turning off the switches by applying positive and optionally negative voltages.