A non-volatile memory device includes a plurality of memory cells arranged in a matrix, a plurality of word lines extended in a row direction, and a plurality of bit lines extended in a column direction. Each of the memory cells is coupled to one of the word lines and one of the bit lines. The memory device further includes a word-line control circuit coupled to and configured to control the word lines, a first bit-line control circuit configured to control the bit lines and sense the memory cells in a digital mode, and a second bit-line control circuit configured to bias the bit lines and sense the memory cells in an analog mode. The first bit-line control circuit is coupled to a first end of each of the bit lines. The second bit-line control circuit is coupled to a second end of each of the bit lines.

Systems and methods related to memory devices that may perform error check and correct (ECC) functionality. The systems and methods may employ ECC logic that may be shared between two or more banks. The ECC logic may be used to perform memory operations such as read, write, and masked-write operations, and may increase reliability of storage data.

An operation method for a memory system may include: an accessing a plurality of memory devices, each including a plurality of dies, in an interleaving manner, and performing program operations; and performing at least one internal read operation to read data from the plurality of dies accessed in the interleaving manner, during the program operations, wherein one or more internal read operations which are performed during any one program operation of the program operations are determined according to a maximum internal read operation number and a minimum internal read operation waiting number.

A memory device and an operating method thereof are provided. The memory device includes a first memory array, a first row decoder, a first column decoder, a second memory array, a second row decoder and a second column decoder. The first memory array and the second memory array are different type memories and formed in a single memory die of a wafer.

A memory device includes a first memory area including a first memory cell array having a plurality of first memory cells and a first peripheral circuit disposed below the first memory cell array; a second memory area including a second memory cell array having a plurality of second memory cells and a second peripheral circuit disposed below the second memory cell array; and a pad area including a power wiring. The first and second memory areas respectively include first and second local lockout circuits separately determining whether to lock out of each of the memory areas. The first and second memory areas are included in a single semiconductor chip to share the pad area, and the first and second memory areas operate individually. Accordingly, in the memory device, unnecessary data loss may be reduced by selectively stopping an operation of only a memory area requiring recovery.

A non-volatile memory device is disclosed. The non-volatile memory device comprises an array of flash memory cells comprising a plurality of flash memory cells organized into rows and columns, wherein the array is further organized into a plurality of sectors, each sector comprising a plurality of rows of flash memory cells, and a row driver selectively coupled to a first row and a second row.

A memory device includes a first memory area including a first memory cell array having a plurality of first memory cells and a first peripheral circuit disposed below the first memory cell array; a second memory area including a second memory cell array having a plurality of second memory cells and a second peripheral circuit disposed below the second memory cell array; and a pad area including a power wiring. The first and second memory areas respectively include first and second local lockout circuits separately determining whether to lock out of each of the memory areas. The first and second memory areas are included in a single semiconductor chip to share the pad area, and the first and second memory areas operate individually. Accordingly, in the memory device, unnecessary data loss may be reduced by selectively stopping an operation of only a memory area requiring recovery.

The present technology relates to a memory device. A memory device according to the present technology may include a plurality of planes, individual operation controllers configured to respectively control read operations on the plurality of planes, a common operation controller configured to control a program operation or an erase operation on any one of the plurality of planes, a command decoder configured to provide a read command among the plurality of commands to an individual operation controller that controls a plane that is indicated by an address that corresponds to the read command among the individual operation controllers, and configured to provide a program command or an erase command among the plurality of commands to the common operation controller, and a peripheral circuit configured to generate operation voltages that are used for the read operations, the program operation, and the erase operation.

The present technology relates to a memory device. A memory device according to the present technology may include a plurality of planes, individual operation controllers configured to respectively control read operations on the plurality of planes, a common operation controller configured to control a program operation or an erase operation on any one of the plurality of planes, a command decoder configured to provide a read command among the plurality of commands to an individual operation controller that controls a plane that is indicated by an address that corresponds to the read command among the individual operation controllers, and configured to provide a program command or an erase command among the plurality of commands to the common operation controller, and a peripheral circuit configured to generate operation voltages that are used for the read operations, the program operation, and the erase operation.

The present disclosure includes apparatuses and methods related to performing background operations in memory. A memory device can be configured to perform background operations while another memory device in a memory system and/or on a common memory module is busy performing commands received from a host coupled to the memory system and/or common memory module. An example apparatus can include a first memory device, wherein the first memory device can include an array of memory cells and a controller configured to perform a background operation on the first memory device in response to detecting a command from a host to a second memory device.