In an anti-fuse memory reading circuit with controllable reading time, a reading time control circuit generates a control signal corresponding to reading time. Based on a clock signal, a programmable reading pulse generation circuit generates a reading pulse with a pulse width corresponding to the control signal. Based on the reading pulse and the control signal, the reading amplification circuit selects a pull-up current source corresponding to the reading time, pulls up a voltage on a bit line (BL) of an anti-fuse memory cell, reads data stored in the anti-fuse memory cell starting from a rising edge of the reading pulse, and latches the read data at a falling edge of the reading pulse. The anti-fuse memory reading circuit can generate a reading pulse with a corresponding pulse width and a pull-up current source with a corresponding size based on the required reading time.

Disclosed herein is an apparatus that includes a fuse array circuit including a plurality of fuse sets each assigned to a corresponding one of a plurality of fuse addresses and configured to operatively store a fuse data, and a first circuit configured to generate and sequentially update a fuse address to sequentially read the fuse data from the plurality of fuse sets. The first circuit is configured to change a frequency of updating the fuse address based on a first signal.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

An anti-fuse circuit includes the following: a first transistor, and at least one parasitic transistor and at least one parasitic triode that are connected to the first transistor. The at least one parasitic transistor and the at least one parasitic triode are connected to a first node.

The present application provides a memory test circuit and a device wafer including the memory test circuit. The memory test circuit is coupled to a memory array having intersecting first and second signal lines, and includes a fuse element and a transistor. The fuse element has a first terminal coupled to a first group of the first signal lines and a test voltage, and has a second terminal coupled to second and third groups of the first signal lines. The transistor has a source/drain terminal coupled to the second terminal of the fuse element and another source/drain terminal coupled to a reference voltage. The first group of the first signal lines are selectively coupled to the test voltage when the transistor is turned on, and all of the first signal lines are coupled to the test voltage when the transistor is kept off.

The present application discloses a semiconductor chip, an electronic device and an electrostatic discharge (ESD) protection method for an electronic device thereof. The semiconductor chip includes an operation electrical contact, a detection electrical contact, an ESD protection unit, and a logic circuit. The operation electrical contact receives an operation signal. The detection electrical contact receives a chip connection signal. The ESD protection unit is coupled to the operation electrical contact. The logic circuit is coupled to the detection electrical contact, and adjusts capacitance of the ESD protection unit according to a chip connection signal received by the detection electrical contact.

The present disclosure provides a method for determining status of a fuse element of a memory device. The method includes providing the memory device including a first terminal and a second terminal and applying a first power signal on the first terminal of the semiconductor device. The memory device includes a configurable reference resistor unit electrically coupled to the fuse element. The method also includes obtaining an evaluation signal at the second terminal of the memory device and identifying the evaluation signal to determine whether the memory device is redundant. The configurable reference resistor unit includes a first resistor, a first transistor connected in parallel with the first resistor, and a first configurable unit connected to a gate of the first transistor. The first configurable unit is configured to generate a first configurable signal to turn on the first transistor.

Methods, apparatuses and systems related to managing repair assets are described. An apparatus stores a repair segment locator and a repair address for each defect repair. The apparatus may be configured to selectively apply a repair asset to one of multiple sections according to the repair segment locator.

Apparatuses, systems, and methods for fuse based device identification. A device may include a number of fuses which are used to encode permanent information on the device. The device may receive an identification request, and may generate an identification number based on the states of at least a portion of the fuses. For example, the device may include a hash generator, which may generate the identification number by using the fuse information as a seed for a hash algorithm.

A semiconductor memory device and an operation method capable of suppressing malfunctions and the like and performing safe operations are provided. A flash memory of the disclosure includes a controller which controls an operation based on a code read from a ROM. The operation method of the disclosure includes detecting whether the code read from the ROM has an error by a CRC processing unit; determining whether to transition to a safe mode when the code having the error is detected; and detecting and correcting the error of the code by an ECC processing unit after transitioning to the safe mode.