A semiconductor device includes a sampling code generation circuit and a code comparator. The sampling code generation circuit includes a buffer circuit configured to receive an external set signal. The sampling code generation circuit is configured to perform a count operation during a sampling period, the sampling period adjusted based on an output signal of the buffer circuit to generate a sampling code. The code comparator is configured to compare the sampling code with a reference code to generate a comparison flag.

A memory circuit which includes: A synchronous memory cell array, configured to receive a clock signal and having address lines and bit lines. A margin agent, determining a status of the synchronous memory cell array based on a time duration between a transition of the clock signal and a change on a signal derived from a bit line due to a signaling on at least one of the address lines. In another aspect, a memory cell, having a bit line configured to provide data input/output to the memory cell may be provided with a comparator, comparing a voltage on the bit line with a reference voltage and indicating of a status of the memory cell thereby. Firmware may receive the indication of the status of a memory cell array, and transmit the indication, issue an alert, and/or reconfigure the memory circuit responsive to the status.

A memory controller component includes transmit circuitry and adjusting circuitry. The transmit circuitry transmits a clock signal and write data to a DRAM, the write data to be sampled by the DRAM using a timing signal. The adjusting circuitry adjusts transmit timing of the write data and of the timing signal such that an edge transition of the timing signal is aligned with an edge transition of the clock signal at the DRAM.

There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.

Methods for improving timing in memory devices are disclosed. A method may include sampling a command signal according to a clock signal to obtain standard-timing commands. The method may also include sampling the command signal according to an adjusted clock signal to obtain time-adjusted commands. The method may also include comparing the standard-timing commands and the time-adjusted commands. The method may also include determining an improved timing for the clock signal based on the comparison of the standard-timing commands and the time-adjusted commands. The method may also include adjusting the clock signal based on the improved timing. Associated systems and methods are also disclosed.

Apparatuses, systems, and methods for self-test mode abort circuit. Memory devices may enter a self-test mode and perform testing operations on the memory array. During the self-test mode, the memory device may ignore external communications. The memory includes an abort circuit which may terminate the self-test mode if it fails to properly finish. For example, the abort circuit may count an amount of time since the self-test mode began and end the self-test mode if that amount of time meets or exceeds a threshold, which may be based off of the expected amount of time for the testing operations to complete.

Embodiments of the disclosure, there is provided a method, a system for adjusting the memory, and a semiconductor device. The method for adjusting the memory includes: acquiring a mapping relationship between a temperature of a transistor, an equivalent width-length ratio of a sense amplifier transistor in a sense amplifier and an actual time at which the data is written into the memory; acquiring a current temperature of the transistor; and adjusting the equivalent width-length ratio, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted equivalent width-length ratio is within a preset writing time.

A method of operating a memory device includes receiving a duty training request, performing first training for a write path in a first period, storing a result value of the first training, performing second training for a write path in a second period, storing a result value of the second training, transmitting the result value of the first training to an external device, and receiving a duty cycle adjuster (DCA) code value corresponding to the first training result value from the external device.

A test circuit includes first integration circuit configured to receive first test signal and integrate first test signal to output first integrated signal; second integration circuit configured to receive second test signal and integrate second test signal to output second integrated signal, where first test signal and second test signal are signals inverted with respect to each other, value of first integrated signal is product of duty cycle of first test signal and a voltage amplitude of power supply, and value of second integrated signal is product of duty cycle of second test signal and voltage amplitude of power supply; and comparison circuit connected to first and second integration circuits. The comparison circuit is configured to output high-level signal in response to first integrated signal being greater than second integrated signal, and output low-level signal in response to second integrated signal being greater than first integrated signal.

System boot time is decreased by performing Memory Receive enable (MRE) training and MDQ-MDQS Read Delay (MRD) training on a buffered Dual In-Line Memory Module (DIMM). MRE training configures the time at which a data buffer on the buffered DIMM enables its receivers to capture data read from DRAM integrated circuits on a MDQ/MDQS bus between the DRAM and the data buffer on the DIMM. After the MRE training has completed, the data buffer is configured to enable the data buffer receivers to receive data on the MDQ bus on the buffered DIMM during the preamble of the incoming MDQS burst from a read transaction in the DRAM. MRD training tunes the relationship between the MDQ/MDQS bus to ensure sufficient setup and hold eye margins for MDQ so that the data buffer optimally samples the data driven by the DRAM during reads of the DRAM.