Embodiments presented herein are directed to testing and/or debugging a memory device of a memory module (e.g., a dual in-line memory module (DIMM)) without having to remove the DIMM from a corresponding computing device and without having to interrupt operation of the computing device. A particular memory device (e.g., DRAM) may be identified for testing and/or debugging based on a failure message. However, the failure message may not identify a specific location or hardware of the module that caused the failure. Embodiments presented herein provide techniques to obtain data for analysis to determine and/or deliver a cause of the failure while reducing or eliminating downtime of the computing device. Test modes to do so may include a synchronous test mode, an asynchronous test mode, and an analog compare mode. A test mode may be selected based on the failure or a signal/function of the DRAM to be tested or debugged.

A semiconductor apparatus may include a fuse cell array, an address generation circuit, a control circuit, and a command generation circuit. The fuse cell array may store a fail address. The address generation circuit may generate a copy address according to test information containing the fail address. The control circuit may control a repair operation including enabling a copy start signal according to the test information and storing the fail address in the fuse cell array according to a copy done signal. The command io generation circuit may generate an address and a plurality of commands for a data copy operation according to the copy start signal and enable the copy done signal when the data copy operation is completed.

Apparatuses, systems, and methods for refresh address masking. A memory device may refresh word lines as part of refresh operation by cycling through the word lines in a sequence. However, it may be desirable to avoid activating certain word lines (e.g., because they are defective). Refresh masking logic for each bank may include a fuse latch which stores a selected address associated with a word line to avoid. When a refresh address is generated it may be compared to the selected address. If there is a match, a refresh stop signal may be activated, which may prevent refreshing of the word line(s).

The present application provides a memory test circuit and a device wafer including the memory test circuit. The memory test circuit is coupled to a memory array having intersecting first and second signal lines, and includes a fuse element and a transistor. The fuse element has a first terminal coupled to a first group of the first signal lines and a test voltage, and has a second terminal coupled to second and third groups of the first signal lines. The transistor has a source/drain terminal coupled to the second terminal of the fuse element and another source/drain terminal coupled to a reference voltage. The first group of the first signal lines are selectively coupled to the test voltage when the transistor is turned on, and all of the first signal lines are coupled to the test voltage when the transistor is kept off.

An apparatus includes a storage area signal generation circuit configured to generate a storage area signal when performing an internal information storage operation and an external information storage operation; and an information storage circuit configured to receive internal failure information, stored in the apparatus, based on the storage area signal and store the received internal failure information as failure information in a set storage capacity, and store external failure information, applied from outside the apparatus, as the failure information in a variable storage capacity.

Methods, systems, and devices for adjustable programming pulses for a multi-level cell are described. A memory device may modify a characteristic of a programming pulse for an intermediate logic state based on a metric of reliability of associated memory cells. The modified characteristic may increase a read window and reverse a movement of a shifted threshold voltage distribution (e.g., by moving the threshold voltage distribution farther from one or more other voltage distributions). The metric of reliability may be determined by performing test writes may be a quantity of cycles of use for the memory cells, a bit error rate, and/or a quantity of reads of the first state. The information associated with the modified second pulse may be stored in fuses or memory cells, or may be implemented by a memory device controller or circuitry of the memory device.

A fuse fault repair circuit includes a fuse array, a signal storage module, and a scan repair module. The fuse array includes a redundant fuse array and a non-redundant fuse array. When the fuse array is not faulty, the redundant fuse array has no signal output, and the non-redundant fuse array outputs S first logic signals. Each storage unit in the signal storage module is configured to store a first logic signal sent by one fuse unit connected thereto. The scan repair module is configured to scan the storage units in the signal storage module, determine, when a faulty storage unit is scanned, that a first fuse unit connected to the faulty storage unit is faulty, and replace the first fuse unit with a first redundant fuse unit corresponding to the first fuse unit. The first logic signal corresponding to the first redundant fuse unit is a normal signal.

Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

A method for testing a memory and a memory testing device are provided. The method for testing the memory includes writing data to a memory including a candidate storage unit, a fuse, and a redundant unit for replacing the candidate storage unit through the fuse when the candidate storage unit is determined to be defective; adjusting a temperature of the memory, and while adjusting the temperature, repeatedly refreshing the memory and recording the state of the fuse; reading the data of the memory if the temperature of the memory is stable at a predetermined temperature; and determining that the fuse is defective if the read data of the memory has an error.