Storage device programming methods, systems and media are described. A method may include encoding data to generate an encoded set of data. A first programming operation may write the encoded set of data to a memory device. The method includes encoding, using a second encoding operation based on the data, to generate a second set of encoded data. The second set of encoded data is stored to a cache. A first decoding operation is performed, based on the second set of encoded data and the encoded set of data, to generate a decoded set of data. A second decoding operation is performed to generate a second decoded set of data. The second decoded set of data is encoded to generate a third set of encoded data. The method includes performing a second programming operation to write the third set of encoded data to the memory device.

An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a row decoder configured to configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections. The row decoder may be further configured to stop an access operation associated with the prime row from proceeding based on a comparison of subset of match signals from either the first or second pluralities of row sections.

An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a row decoder configured to configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections. The row decoder may be further configured to stop an access operation associated with the prime row from proceeding based on a comparison of subset of match signals from either the first or second pluralities of row sections.

A controller includes an internal memory to store an address and a memory control unit operatively coupled with the internal memory. The memory control unit includes logic to identify a malfunctioning address of primary data storage elements within an external memory device, the external memory device being another semiconductor device separate from the controller, store the malfunctioning address in the internal memory, and transmit, to the external memory device, a command to initiate a repair of the malfunctioning address using redundant data storage elements and an indication of an address associated with the malfunctioning address.

Embodiments of the disclosure are drawn to apparatuses and methods for storing an enable state of an address. The address may be broadcast from a fuse array to a fuse latch, and may be associated with enable information. The fuse latch may include a plurality of enable latch circuits, each of which may receive the enable information in common, and each of which may store the enable information as an enable bit. Each of the enable latch circuits may provide a respective enable signal based on a state of the stored enable bit. An enable logic circuit may provide an overall enable signal with a state determined by the states of all of the enable signals from the plurality of enable latch circuits.

A system may be provided that provides redundancy for a plurality of embedded memories such as SRAMs. The system may include one or more decoders, each capable of decoding a selection address to identify a defective one of the embedded memories.

A dynamic random access memory (DRAM) comprises a plurality of primary data storage elements, a plurality of redundant data storage elements, and circuitry to receive a first register setting command and initiate a repair mode in the DRAM in response to the first register setting command. The circuitry is further to receive an activation command, repair a malfunctioning row address in the DRAM, receive a precharge command, receive a second register setting command, terminate the repair mode in the DRAM in response to the second register setting command, receive a memory access request for data stored at the malfunctioning row address, and redirect the memory access request to a corresponding row address in the plurality of redundant data storage elements.

A controller includes an internal memory to store an address and a memory control unit operatively coupled with the internal memory. The memory control unit includes logic to identify a malfunctioning address of primary data storage elements within an external memory device, the external memory device being another semiconductor device separate from the controller, store the malfunctioning address in the internal memory, and transmit, to the external memory device, a command to initiate a repair of the malfunctioning address using redundant data storage elements and an indication of an address associated with the malfunctioning address.

Methods, systems, and devices for circuitry borrowing in memory arrays are described. In one example, a host device may transmit an access command associated with data for a first memory section to a memory device. The first memory section may be located between a second memory section and a third memory section. A first set of circuitry shared by the first memory section and the second memory section may be operated using drivers associated with the first memory section and drivers associated with the second memory section. A second set of circuitry shared by the first memory section and the third memory section may be operated using drivers associated with the first memory section and drivers associated with the third memory section. An access operation may be performed based on operating the first set of circuitry and the second set of circuitry.

Memory devices are disclosed. A memory device may include a memory array including a number of column planes and at least one circuit coupled to the memory array. The at least one circuit may generate test result data for a column address for each column plane of the number of column planes. The at least one circuit may further convert the test result data to a first result responsive to two or more of the column planes failing the test. The at least one circuit may also convert the test result data to a second result responsive to no column planes failing the test. Further, the at least one circuit may convert the test result data to a third result responsive to one column plane failing the test. The third result may identify the one column plane. Methods of testing a memory device, and electronic systems are also disclosed.