In one aspect, an apparatus includes a memory repair controller coupled to a memory. The memory repair controller may be configured to provide repair information to cause the memory to disable one or more faulty locations in the memory, and the memory repair controller can be disabled after providing the repair information.

This application provides a memory, a chip, and a method for storing repair information of the memory. The memory includes a repair circuit that is configured to receive a first signal from a processor and determine to be powered by a first power supply or a second power supply based on a status of the first signal, to store repair information. The repair information is information of the failed bit cells in the memory. The first power supply is zero or in a high impedance state when a system is powered off, and the second power supply is not zero when the system is powered off. The memory further comprises a processing circuit configured to perform communication between the memory and the processor based on the repair information. Therefore, the repair information of the memory can be stored even during power loss.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

An integrated circuit comprises a set of processor cores, wherein each processor core of the set of processor cores includes BIST logic circuitry and multiple memory blocks coupled to the BIST logic circuitry. Each processor core further includes multiple power control circuitry, where each power control circuitry of the multiple power control circuitry is coupled to a respective processor core of the set of processor cores, multiple isolation circuitry, where each isolation circuitry of the multiple isolation circuitry is coupled to a respective processor core of the set of processor cores, a built-in-self repair (BISR) controller coupled to the each of the set of processor cores, each of the multiple power control circuitry, and each of the multiple isolation circuitry, and a safety controller coupled to the BISR controller, the multiple power control circuitry, and to the multiple isolation circuitry.

A memory system including a memory device suitable for performing, in stages, a program loop including a program operation and a program verification operation on each page within a memory block selected among a plurality of memory blocks, updating a maximum number of program loops for the selected memory block by comparing a number of program loops on each page, which are performed until the program verification operation is processed as a pass on the page, with a current maximum number of program loops for the selected memory block, and storing the updated maximum number of program loops for the selected memory block as program pass information of the selected memory block; and a controller suitable for managing the selected memory block as a bad block based on the program pass information of the selected memory block.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

Disclosed is a memory system including a memory device suitable for performing, in stages, a program loop including a program operation and a program verification operation on each page within a memory block selected among a plurality of memory blocks, updating a maximum number of program loops for the selected memory block by comparing a number of program loops on each page, which are performed until the program verification operation is processed as a pass on the page, with a current maximum number of program loops for the selected memory block, and storing the updated maximum number of program loops for the selected memory block as program pass information of the selected memory block; and a controller suitable for managing the selected memory block as a bad block based on the program pass information of the selected memory block.

In one aspect, an apparatus includes a memory repair controller coupled to a memory. The memory repair controller may be configured to provide repair information to cause the memory to disable one or more faulty locations in the memory, and the memory repair controller can be disabled after providing the repair information.

A semiconductor device may include a main circuit component and a spare circuit component including a plurality of spare elements and selected to change a function of the main circuit component, wherein each of the plurality of spare elements is configured to block a source voltage supply.

Disclosed herein is a redundancy resource comparator for a bus architecture of a memory device for comparing an address signal being received from an address signal bus and a redundancy address being stored in a latch of the memory device. Disclosed is also a corresponding bus architecture and comparison method.