A determination that a first programming operation has been performed on a particular memory cell can be made. A determination can be made, based on one or more threshold criteria, whether the particular memory cell has transitioned from a state associated with a decreased error rate to another state associated with an increased error rate. In response to determining that the particular memory cell has transitioned from the state associated with the decreased error rate to the another state associated with the increased error rate, an operation can be performed on the particular memory cell to transition the particular memory cell from the another state associated with the increased error rate to the state associated with the decreased error rate.

This application provides a memory, a chip, and a method for storing repair information of the memory. The memory includes a repair circuit that is configured to receive a first signal from a processor and determine to be powered by a first power supply or a second power supply based on a status of the first signal, to store repair information. The repair information is information of the failed bit cells in the memory. The first power supply is zero or in a high impedance state when a system is powered off, and the second power supply is not zero when the system is powered off. The memory further comprises a processing circuit configured to perform communication between the memory and the processor based on the repair information. Therefore, the repair information of the memory can be stored even during power loss.

Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.

A self-correcting memory system comprising an integrated circuit including memory and memory content authentication functionality, which is operative to compare content to be authenticated to a standard and to output “authentic” if the content to be authenticated equals the standard and “non-authentic” otherwise; and error correction functionality which is operative to apply at least one possible correction to at least one erroneous word entity in said memory, yielding a possibly correct word entity, call said authentication for application to the possibly correct word entity, and if the authentication's output is “authentic”, to replace said erroneous word entity in said memory, with said possibly correct word entity thereby to yield error correction at a level of confidence derived from the level of confidence associated with the authentication.

An apparatus causes a program loader to load a first program and a second program that is obtained by correcting the first program, into a memory, and causes a linker to load a library used for execution of the second program into the memory. The apparatus writes first data that has been processed at a suspension time at which execution of the first program is suspended, into a first data area for the first program loaded into the memory, and starts execution of the second program from a second position on the second program corresponding to a first position where execution of the first program is suspended.

Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.

A determination that a first programming operation has been performed on a particular memory cell can be made. A determination can be made, based on one or more threshold criteria, whether the particular memory cell has transitioned from a state associated with a decreased error rate to another state associated with an increased error rate. In response to determining that the particular memory cell has transitioned from the state associated with the decreased error rate to the another state associated with the increased error rate, an operation can be performed on the particular memory cell to transition the particular memory cell from the another state associated with the increased error rate to the state associated with the decreased error rate.

A memory-testing circuit configured to perform a test of a memory comprising error-correcting code circuitry comprises repair circuitry configured to allocate a spare row or row block in the memory for a defective row or row block in the memory, a defective row or row block being a row or row block in which a memory word has a number of error bits greater than a preset number, wherein the test of the memory comprises: disabling the error-correcting code circuitry, performing a pre-repair operation, the pre-repair operation comprising: determining whether the memory has one or more defective rows or row blocks, and allocating one or more spare rows or row blocks for the one or more defective rows or row blocks if the one or more spare rows or row blocks are available, and performing a post-repair operation on the repaired memory.

A memory includes an error detection circuit that identifies a faulty feature in an array of memory cells within the memory. A redundancy enable circuit functions to replace the faulty feature with a redundant feature. The error detection circuit and the redundancy enable circuit function concurrently with a read operation on the array of memory cells.

The present disclosure in the field of memory technology proposes a programmable storage cell, a programmable storage array and a reading and writing method for the programmable storage array. The programmable storage cell includes: a first anti-fuse element connected between a first power terminal and an output terminal, a second anti-fuse element connected between the second power terminal and the output terminal, and a third switch unit connected to the output terminal, a third power terminal and a position signal terminal, where the third switch unit responds to the signal from the position signal terminal so as to connect the third power terminal and the output terminal. The programmable storage cell has a simple structure and a high reading speed.