An example apparatus can include a memory array and control circuitry. The memory array can include a first portion including a first plurality of memory cells. The memory array can further include a second portion including a second plurality of memory cells. The control circuitry can be configured to designate the first portion as active responsive to a determination that the first portion passed a performance test. The control circuitry can be configured to designate the second portion as inactive responsive to a determination that the second portion failed the performance test.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

Embodiments of the present disclosure provide a method and an apparatus for testing a depth learning chip, an electronic device, and a computer-readable storage medium. The method includes: testing a plurality of logic units in the depth learning chip. The plurality of logic units are configured to perform at least one of an inference operation and a training operation for depth learning. The method further include: obtaining one or more error units that do not pass the testing from the plurality of logic units. In addition, the method further includes: in response to a ratio of a number of the one or more error units to a total number of the plurality of logic units being lower than or equal to a predetermined ratio, determining the depth learning chip as a qualified chip.

The present disclosure relates to an electronic device. According to the present disclosure, a storage device includes a memory controller acquiring a valid address reflecting a bad block more quickly and a plurality of memory devices each including a plurality of memory blocks included in each of a plurality of planes.

A product, system, and/or method of managing memory media that includes: determining whether the memory system is low on one or more ready-to-use (RTU) Block Stripes needed to form a RTU Block Stripe Set, wherein the memory media has a plurality of Planes in each Die, all the memory media Blocks in each Block Stripe are from the same Die # and the same Plane #, each Block Stripe Set is formed of a plurality of Block Stripes all from the same Die #, and all the Blocks in each RTU Block Stripe Set have been subject to the removal process and the erasure process. The product, system, and/or method includes: establishing a pending request for a removal process and/or an erasure process for one or more determined Die #/Plane # combinations; and prioritizing in the one or more determined Die #/Plane # combinations one or more memory media Blocks for the removal and/or erasure process.

According to one embodiment, there is provided a memory system including a non-volatile memory and a controller. The non-volatile memory includes a plurality of physical blocks. The controller is connected to any of the plurality of physical blocks via a plurality of channels. The controller is configured to construct a plurality of logical blocks and, read or write data from or into any of the plurality of logical blocks constructed. The logical blocks are management units in which any of the physical blocks is grouped across the plurality of channels. The controller is configured to construct the plurality of logical blocks so that a first number of defective blocks and a second number of pseudo defective blocks for shortfall defective blocks with respect to a target number of defective blocks are distributed into the plurality of logical blocks.

The present disclosure generally relates to methods and systems for allocating free blocks as decommissioned blocks to replace bad blocks. In certain embodiments, when there are insufficient free blocks in a free block list to replace a bad or defective block for a CE, an FTL scans blocks stored in an unallocated block repository. If there are unallocated blocks available for the CE, one or more is reallocated as free blocks and used to replace the bad or defective block. When only one or no further unallocated blocks for the CE are available, the FTL places the CE in a read-only mode.

A memory device includes a memory array with memory blocks each having a plurality of memory cells, and one or more current monitors configured to measure current during post-deployment operation of the memory device; and a controller configured to identify a bad block within the memory blocks based on the measured current, and disable the bad block for preventing access thereof during subsequent operations of the memory device.

A self-correcting memory system comprising an integrated circuit including memory and memory content authentication functionality, which is operative to compare content to be authenticated to a standard and to output “authentic” if the content to be authenticated equals the standard and “non-authentic” otherwise; and error correction functionality which is operative to apply at least one possible correction to at least one erroneous word entity in said memory, yielding a possibly correct word entity, call said authentication for application to the possibly correct word entity, and if the authentication's output is “authentic”, to replace said erroneous word entity in said memory, with said possibly correct word entity thereby to yield error correction at a level of confidence derived from the level of confidence associated with the authentication.

A storage device for preventing occurrence of a read fail has a reduced overhead. The storage device includes a memory device with a plurality of memory blocks; and a memory controller for managing a fail block and a shared block as bad blocks. The fail block is determined to be a bad block among the plurality of memory blocks. The shared block is a memory block that shares a control signal for selecting the fail block in the memory device.