G11C7/20

DIE LOCATION DETECTION FOR GROUPED MEMORY DIES
20230052489 · 2023-02-16 ·

Methods, systems, and devices for die location detection for grouped memory dies are described. A memory device may include multiple memory die that are coupled with a shared bus. In some examples, each memory die may include a circuit configured to output an identifier associated with a location of the respective memory die. For example, a first memory die may output a first identifier, based on receiving one or more signals, that identifies a location of the first memory die. Identifying the locations of the respective memory dies may allow for the dies to be individually accessed despite being coupled with a shared bus.

Storage backed memory package save trigger
11579979 · 2023-02-14 · ·

Devices and techniques for a storage backed memory package save trigger are disclosed herein. Data can be received via a first interface. The data is stored in a volatile portion of the memory package. Here, the memory package includes a second interface arranged to connect a host to a controller in the memory package. A reset signal can be received at the memory package via the first interface. The data stored in the volatile portion of the memory package can be saved to a non-volatile portion of the memory package in response to the reset signal.

Storage backed memory package save trigger
11579979 · 2023-02-14 · ·

Devices and techniques for a storage backed memory package save trigger are disclosed herein. Data can be received via a first interface. The data is stored in a volatile portion of the memory package. Here, the memory package includes a second interface arranged to connect a host to a controller in the memory package. A reset signal can be received at the memory package via the first interface. The data stored in the volatile portion of the memory package can be saved to a non-volatile portion of the memory package in response to the reset signal.

Authentication logging using circuitry degradation

Apparatuses and methods related to logging failed authentication attempts. Failed authentication attempts can be logged in the circuitry by degrading the circuitry. The degradation can signal a fail authentication attempt while an amount of the degradation can represent a timing of the error.

POWER-ON READ DEMARCATION VOLTAGE OPTIMIZATION
20230043775 · 2023-02-09 ·

A system comprising includes a memory device having memory cells a processing device, operatively coupled to the memory device. The processing device is to perform operations including: determining a length of time the memory device has been powered off; and in response to determining that the length of time satisfies a threshold value: for each of multiple groups of memory cells, asserting a corresponding flag; determining, based on the length of time, one or more adjusted demarcation voltages to be used in reading a state of the multiple groups of memory cells; and storing the one or more adjusted demarcation voltages for use in performing memory operations.

POWER-ON READ DEMARCATION VOLTAGE OPTIMIZATION
20230043775 · 2023-02-09 ·

A system comprising includes a memory device having memory cells a processing device, operatively coupled to the memory device. The processing device is to perform operations including: determining a length of time the memory device has been powered off; and in response to determining that the length of time satisfies a threshold value: for each of multiple groups of memory cells, asserting a corresponding flag; determining, based on the length of time, one or more adjusted demarcation voltages to be used in reading a state of the multiple groups of memory cells; and storing the one or more adjusted demarcation voltages for use in performing memory operations.

Quick reliability scan for memory device

Technologies for performing a quick reliability scan include, for a particular block of a set of blocks of different block types. Each block of the set of blocks includes pages of memory of a physical memory device. A subset of the pages of the block is identified. The block is scanned by scanning the subset of the plurality of pages of the block for a fold condition. A page of the subset of the plurality of pages is determined to have the fold condition. After the set of blocks has been scanned, the folding of the block that includes the page that has been determined to have the fold condition is requested.

Quick reliability scan for memory device

Technologies for performing a quick reliability scan include, for a particular block of a set of blocks of different block types. Each block of the set of blocks includes pages of memory of a physical memory device. A subset of the pages of the block is identified. The block is scanned by scanning the subset of the plurality of pages of the block for a fold condition. A page of the subset of the plurality of pages is determined to have the fold condition. After the set of blocks has been scanned, the folding of the block that includes the page that has been determined to have the fold condition is requested.

Switchable power supply

The present disclosure describes a power supply switch that includes a voltage generator, a switch circuit, and a confirmation circuit. The voltage generator is configured to compare a first power supply voltage to a second power supply voltage and to output the first power supply voltage or the second power supply voltage as a bulk voltage (V.sub.bulk). The switch circuit includes one or more transistors and is configured to (i) bias bulk terminals of the one or more transistors with the V.sub.bulk and (ii) output either the first power supply voltage or the second power supply voltage as a voltage output signal. The confirmation circuit is configured to output a confirmation signal that indicates whether the voltage output signal transitioned from the first power supply voltage to the second power supply voltage.

Switchable power supply

The present disclosure describes a power supply switch that includes a voltage generator, a switch circuit, and a confirmation circuit. The voltage generator is configured to compare a first power supply voltage to a second power supply voltage and to output the first power supply voltage or the second power supply voltage as a bulk voltage (V.sub.bulk). The switch circuit includes one or more transistors and is configured to (i) bias bulk terminals of the one or more transistors with the V.sub.bulk and (ii) output either the first power supply voltage or the second power supply voltage as a voltage output signal. The confirmation circuit is configured to output a confirmation signal that indicates whether the voltage output signal transitioned from the first power supply voltage to the second power supply voltage.