A system which identifies a memory device using a physical unclonable function. The system performs raw read operations on every page of a block; sorts the pages into low and high groups using an average number of ones based on the raw read operations; generates unordered page pairs by sequentially selecting a first page from the low group and a second page from the high group; generates ordered page pairs by selectively converting an order of pages in each pair of the unordered page pairs; and generates a sequence for identifying the selected block based on comparing the average number of ones for pages in each ordered page pair.

A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memory cell are programmed into an anti-parallel state. Then, an initial value of a control current is set. Then, an enroll action is performed on the first and second magnetoresistive random access memory cells. If the first and second magnetoresistive random access memory cells fail to pass the verification action, the control current is increased by a current increment, and the step of setting the control current is performed again. If the first and second magnetoresistive random access memory cells pass the verification action, a one-bit random code is stored in the first magnetoresistive random access memory cell or the second magnetoresistive random access memory cell.

A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memory cell are programmed into an anti-parallel state. Then, an initial value of a control current is set. Then, an enroll action is performed on the first and second magnetoresistive random access memory cells. If the first and second magnetoresistive random access memory cells fail to pass the verification action, the control current is increased by a current increment, and the step of setting the control current is performed again. If the first and second magnetoresistive random access memory cells pass the verification action, a one-bit random code is stored in the first magnetoresistive random access memory cell or the second magnetoresistive random access memory cell.

A memory device may include a memory system and an energy storage device. Additionally, the energy storage device may supply a first power to the memory system when a second power from a power supply is eliminated or insufficient.

A memory device may include a memory system and an energy storage device. Additionally, the energy storage device may supply a first power to the memory system when a second power from a power supply is eliminated or insufficient.

Apparatuses and methods related to logging failed authentication attempts. Failed authentication attempts can be logged in the circuitry by degrading the circuitry. The degradation can signal a fail authentication attempt while an amount of the degradation can represent a timing of the error.

A data storage device includes a non-volatile memory device including a memory block having a number of memory dies, and a controller coupled to the memory device. A memory access command is received and a memory access operation based on the received command is performed. A number of bytes transferred during the memory access operation is determined, and the determined number of bytes is analyzed to determine whether the number of transferred bytes is equal to a predetermined number. A transfer status fail bit is set if the number of transferred bytes is not equal to the predetermined number.

A memory circuit which includes: A synchronous memory cell array, configured to receive a clock signal and having address lines and bit lines. A margin agent, determining a status of the synchronous memory cell array based on a time duration between a transition of the clock signal and a change on a signal derived from a bit line due to a signaling on at least one of the address lines. In another aspect, a memory cell, having a bit line configured to provide data input/output to the memory cell may be provided with a comparator, comparing a voltage on the bit line with a reference voltage and indicating of a status of the memory cell thereby. Firmware may receive the indication of the status of a memory cell array, and transmit the indication, issue an alert, and/or reconfigure the memory circuit responsive to the status.

Apparatus and methods for soft post package repair are disclosed. One such apparatus can include memory cells in a package, volatile memory configured to store defective address data responsive to entering a soft post-package repair mode, a match logic circuit and a decoder. The match logic circuit can generate a match signal indicating whether address data corresponding to an address to be accessed matches the defective address data stored in the volatile memory. The decoder can select a first group of the memory cells to be accessed instead of a second group of the memory cells responsive to the match signal indicating that the address data corresponding to the address to be accessed matches the defective address data stored in the volatile memory. The second group of the memory cells can correspond to a replacement address associated with other defective address data stored in non-volatile memory of the apparatus.

According to one embodiment, a memory device includes a first nonvolatile memory die, a second nonvolatile memory die, a controller, and a first temperature sensor and a second temperature sensor incorporated respectively in the first nonvolatile memory die and the second nonvolatile memory die. The controller reads temperatures measured by the first and second temperature sensors, from the first and second nonvolatile memory dies. When at least one of the temperatures read from the first and second nonvolatile memory dies is equal to or higher than a threshold temperature, the controller reduces a frequency of issue of commands to the first and second nonvolatile memory dies or a seed of access to the first and second nonvolatile memory dies.