An address control circuit includes an address timing control circuit configured to latch address signals inputted from outside the address timing control circuit, sequentially store the latched signals at predetermined timings, and output the stored signals as a bank group address. The address control circuit also includes an address multiplexing circuit configured to generate bank group select signals according to the bank group address. The address multiplexing circuit is configured to generate the bank group select signals having a second value according to the bank group address having a first value when a preset memory access mode is a first memory access mode, and generate the bank group select signals having the second value according to the bank group address having a third value different from the first value when the preset memory access mode is a second memory access mode.

Methods, apparatuses, and systems related to coordinating a set of timing-critical operations across parallel processing pipelines are described. The coordination may include selectively using (1) circuitry associated with a corresponding pipeline to generate enable signals associated with the timing critical operations when a separation between the operations corresponds to a number of pipelines or (2) circuitry associated with a non-corresponding or another pipeline when the separation is not a factor of the number of pipelines.

Methods, apparatuses, and systems related to coordinating a set of timing-critical operations across parallel processing pipelines are described. The coordination may include selectively using (1) circuitry associated with a corresponding pipeline to generate enable signals associated with the timing critical operations when a separation between the operations corresponds to a number of pipelines or (2) circuitry associated with a non-corresponding or another pipeline when the separation is not a factor of the number of pipelines.

A memory controller component includes transmit circuitry and adjusting circuitry. The transmit circuitry transmits a clock signal and write data to a DRAM, the write data to be sampled by the DRAM using a timing signal. The adjusting circuitry adjusts transmit timing of the write data and of the timing signal such that an edge transition of the timing signal is aligned with an edge transition of the clock signal at the DRAM.

A memory controller component includes transmit circuitry and adjusting circuitry. The transmit circuitry transmits a clock signal and write data to a DRAM, the write data to be sampled by the DRAM using a timing signal. The adjusting circuitry adjusts transmit timing of the write data and of the timing signal such that an edge transition of the timing signal is aligned with an edge transition of the clock signal at the DRAM.

A memory device of a memory module includes a CA buffer that receives a command/address (CA) signal through a bus shared by a memory device different from the memory device of the memory module, and a calibration logic circuit that identifies location information of the memory device on the bus. The memory device recognizes its own location on a bus in a memory module to perform self-calibration, and thus, the memory device appropriately operates even under an operation condition varying depending on a location in the memory module.

A memory device of a memory module includes a CA buffer that receives a command/address (CA) signal through a bus shared by a memory device different from the memory device of the memory module, and a calibration logic circuit that identifies location information of the memory device on the bus. The memory device recognizes its own location on a bus in a memory module to perform self-calibration, and thus, the memory device appropriately operates even under an operation condition varying depending on a location in the memory module.

A method for operating a data interface circuit whereby calibration adjustments for data bit capture are made without disturbing normal system operation includes initially establishing, using a first calibration method where a data bit pattern received by the data interface circuit is predictable, an optimal sampling point for sampling data bits received by the data interface circuit, and during a normal system operation and without disturbing the normal system operation, performing a second calibration method where the data bit pattern received by the data interface circuit is unpredictable. The second calibration method determines an amount of a timing drift for received data bit edge transitions and adjusts the optimal timing point determined by the first calibration method to create a revised optimal timing point. The second calibration method samples fringe timing points associated with the transition edges of a data bit.

A method for operating a data interface circuit whereby calibration adjustments for data bit capture are made without disturbing normal system operation includes initially establishing, using a first calibration method where a data bit pattern received by the data interface circuit is predictable, an optimal sampling point for sampling data bits received by the data interface circuit, and during a normal system operation and without disturbing the normal system operation, performing a second calibration method where the data bit pattern received by the data interface circuit is unpredictable. The second calibration method determines an amount of a timing drift for received data bit edge transitions and adjusts the optimal timing point determined by the first calibration method to create a revised optimal timing point. The second calibration method samples fringe timing points associated with the transition edges of a data bit.

There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.