Disclosed herein are charge or electricity generating devices and methods of making and use thereof.

Disclosed herein are charge or electricity generating devices and methods of making and use thereof.

This disclosure provides systems, methods, and apparatus related to beam stops. In one aspect, a device comprises a luminescent material, a beam stop plate, and an optical fiber. The luminescent material is a parallelepiped having a first side and a second side that are squares and having a third side that is a rectangle or a square. The first side and the second side are perpendicular to the third side. The beam stop plate is attached to the first side of the luminescent material. The optical fiber has a first end and a second end, with the first end of the optical fiber attached to the third side of the luminescent material.

This disclosure provides systems, methods, and apparatus related to beam stops. In one aspect, a device comprises a luminescent material, a beam stop plate, and an optical fiber. The luminescent material is a parallelepiped having a first side and a second side that are squares and having a third side that is a rectangle or a square. The first side and the second side are perpendicular to the third side. The beam stop plate is attached to the first side of the luminescent material. The optical fiber has a first end and a second end, with the first end of the optical fiber attached to the third side of the luminescent material.

Embodiments of the present disclosure are directed to a phototherapy eye device. In an example, the phototherapy eye device includes a number of radioluminescent light sources and an anchor. Each radioluminescent light source includes an interior chamber coated with phosphor material, such as zinc sulfide, and containing a radioisotope material, such as gaseous tritium. The volume, shape, phosphor material, and radioisotope material are selected for emission of light at a particular wavelength and delivering a particular irradiance on the retina (when implanted in an eyeball). The wavelength is in the range of 400 to 600 nm and the irradiance is substantially 10.sup.9 to 10.sup.11 photons per second per cm.sup.2.

A lighting element with a gaseous tritium light source and an elongated plastic housing that at least partially encloses the gaseous tritium light source with its housing shell and forms a latching element that snaps together with the gaseous tritium light source, which can be inserted into the plastic housing, and holds it in the plastic housing. A rugged lighting element can be produced if the latching element is formed by at least one catch element, which catch element has a radially sprung flexible spring and at least one, preferably two, inwardly oriented snaps with an indentation for snapping together with the gaseous tritium light source.

A lighting element with a gaseous tritium light source and an elongated plastic housing that at least partially encloses the gaseous tritium light source with its housing shell and forms a latching element that snaps together with the gaseous tritium light source, which can be inserted into the plastic housing, and holds it in the plastic housing. A rugged lighting element can be produced if the latching element is formed by at least one catch element, which catch element has a radially sprung flexible spring and at least one, preferably two, inwardly oriented snaps with an indentation for snapping together with the gaseous tritium light source.

An electrode for beta-photovoltaic cells includes: a substrate formed of a conductive layer with a thickness ranging between about 10 nm to 1 micron; a composite layer of radioluminescent phosphor with radioisotope particles homogeneously dispersed therein formed on conductive substrate with a thickness ranging between about 1 and 25 microns; and a semiconductor comprising a P-i-N/P-u-N junction or a N-i-P-P junction. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90.

An electrode for beta-photovoltaic cells includes: a substrate formed of a conductive layer with a thickness ranging between about 10 nm to 1 micron; a composite layer of radioluminescent phosphor with radioisotope particles homogeneously dispersed therein formed on conductive substrate with a thickness ranging between about 1 and 25 microns; and a semiconductor comprising a P-i-N/P-u-N junction or a N-i-P-P junction. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90.

An electrophoretic deposition (EPD) process forms a radioluminescent phosphor and radioisotope composite layer on a conductive surface of a substrate. In the composite layer formed, the particles of radioisotope are homogeneously dispersed with the radioluminescent phosphor. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90. By applying the composite layer using the EPD process, the electrode can be configured for betavoltaic, beta-photovoltaic and photovoltaic cells according to further embodiments. A direct bandgap semiconductor device can convert betas and/or photons emitted from composite layer. Methods and choice of materials and components produces a hybrid radioisotope battery, conversion of photons and nuclear decay products, or radioluminescent surfaces.