Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

A conductor assembly including an electrically conductive material defining a longitudinal axis, a microporous membrane surrounding the electrically conductive material defining a series of pores, and a ceramic material within at least a first portion of the series of pores.

A conductor assembly including an electrically conductive material defining a longitudinal axis, a microporous membrane surrounding the electrically conductive material defining a series of pores, and a ceramic material within at least a first portion of the series of pores.

A barium titanate fiber is useful as a filler for a polymer composite piezoelectric body, a polymer composite piezoelectric body has high piezoelectric properties, and a piezoelectric element utilizes the polymer composite piezoelectric body. In the barium titanate fiber, the molar ratio of barium atoms to titanium atoms (Ba/Ti ratio) falls within the range of 1.01 to 1.04. The polymer composite piezoelectric body includes a resin composition containing the barium titanate fiber and a polymer. The piezoelectric element including an electrically conductive layer on one surface or both surfaces of the polymer composite piezoelectric body.

A ceramic subassembly manufactured by a 3D-printing process is described. The ceramic subassembly comprises a ceramic substrate having a sidewall extending to spaced apart first and second end surfaces. At least one via extends through the substrate from the ceramic substrate first end surface to the ceramic substrate second end surface. In cross-section, the via has a square-shape with rounded corners.

An alumina-ceramic-based electrical insulator, to a method for producing the insulator, and to a vacuum tube includes the insulator. The electrical insulator is for insulating two electrodes of a vacuum tube through which a charged particle beam flows, the electrical insulator being formed of an alumina-based ceramic. The ceramic comprises a vitreous phase of between 2% and 8% by weight into which at least one metal oxide is diffused from a face of the electrical insulator.

An alumina-ceramic-based electrical insulator, to a method for producing the insulator, and to a vacuum tube includes the insulator. The electrical insulator is for insulating two electrodes of a vacuum tube through which a charged particle beam flows, the electrical insulator being formed of an alumina-based ceramic. The ceramic comprises a vitreous phase of between 2% and 8% by weight into which at least one metal oxide is diffused from a face of the electrical insulator.

A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO.sub.2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

A high temperature resistant wire is provided. The high temperature resistant wire comprises a carbon nanotube wire and a boron nitride layer coated on a surface of the carbon nanotube wire. The boron nitride layer is coaxially arranged with the carbon nanotube wire. A working temperature of the high temperature resistant wire in the air ranges from 0K to 1600K. A working temperature of the high temperature resistant wire in vacuum ranges from 0K to 2500K. A detector using the high temperature resistant wire is also provided.