A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature.

Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.

A method of forming a single phase compositionally complex material including a plurality of transition metals is provided. The method includes creating a magnetic phase diagram to predict magnetic behavior, by calculating expected magnetic states and calculating the spin structure factor by Fourier transform; calculating the spin structure factor by Fourier transform; obtaining a transition temperature from the spin structure factor; selecting the plurality of transition metals and corresponding transition metal composition ratios for the material based on a desired magnetic behavior and the calculated spin structure factor; and forming the material that is a compositionally complex transition metal oxide comprising the plurality of transition metals at the selected composition ratios. The material may be a compositionally complex ABO.sub.3 perovskite film in which A is La and B is the plurality of transition metals including Cr, Mn, Fe, Co, and Ni.

A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.

According to one embodiment, a sensor includes a supporter, a film portion, a first element, and a first magnetic portion. The supporter includes a first support portion and a second support portion. The film portion includes a first partial region supported by the first support portion. The first element is provided at the first partial region. The first element includes a first electrode region, a first opposing electrode region, and a first magnetic layer provided between the first electrode region and the first opposing electrode region. A direction from the second support portion toward the first magnetic portion is aligned with a first direction. The first direction is from the first opposing electrode region toward the first electrode region. At least a portion of the first magnetic portion overlaps at least a portion of the first element in a direction crossing the first direction.

According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

Methods and related systems for separating isotopes of an element are provided. The element has at least two isotopic forms. The method includes hyperpolarizing one or more of the isotopic forms in a feedstock, and applying a magnetic field to the target isotopes in order to at least partially spatially separate the isotopic forms of the element from one another.

The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an -Fe.sub.16N.sub.2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.