A method for fabricating polymeric sheets containing microwires includes encapsulating at least a portion of individual lengths of a plurality of microwires in a non-conductive polymeric sheet while the microwires are attached to the substrate. The microwires are then detached from the substrate without removing the microwires from the polymeric sheet. The detaching step forms a separated polymeric sheet containing the detached microwires. Individual detached microwires of the plurality are approximately perpendicular to the separated polymeric sheet. A microwire array device includes a non-conductive polymeric sheet and a plurality of microwires. Individual microwires of the plurality have an independent length at least partially encapsulated by the polymeric sheet, are approximately perpendicular to the polymeric sheet, and contain magnetic ferrite.

The present invention relates to a process for preparing a rodlike magnetic ferroferric oxide (Fe.sub.3O.sub.4) material and use thereof. The preparation includes the following steps: step 1: magnetic Fe3O4 nanoparticle preparation; and step 2: self-assembly of magnetic Fe3O4@SiO2 nanoparticles into a rodlike magnetic material. When in use, the rodlike magnetic Fe.sub.3O.sub.4 material prepared by the process according to claim 1 is used in micro- and nano-motors, which can implement rotation and deflection in an external magnetic field. The present invention provides a process for preparing a rodlike magnetic Fe.sub.3O.sub.4 material. The rodlike magnetic ferroferric oxide material prepared by the process is suitable for mass production on an industrial scale, featuring identifiable direction of the magnetic moment, strong magnetism, good magnetic response, simple process, and low cost.

Various embodiments include an electrical device comprising an antiferromagnetic topological insulator having a surface comprising a bulk domain wall configured to support a first type of 1D chiral channel, a surface step configured to support a second 1D chiral channel and intersecting the bulk domain wall to form thereat a quantum point junction.

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

A method for producing a permanent or soft magnet including the following steps: a) providing: a solution containing a solvent in which are dispersed a set of objects which possess a permanent magnetic moment; a substrate on which are fixed to the surface or within a cavity that it may have, a 1st pad and a 2nd pad, said 1st pad includes a face facing and parallel to a face that the 2nd pad includes; b) the solution is deposited on the surface of the substrate or, as the case may be, within its cavity; c) the substrate is placed in a magnetic field so that the set of objects are grouped together between the face of the 1st pad and the face of the 2nd pad so as to form a permanent magnet.

A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

A method for preparing copper-nickel cobaltate nanowires includes steps of: (1) dissolving a soluble nickel salt, cobalt salt and copper salt in ultrapure water, and preparing same into a mixed salt solution A; (2) adding 1-4 mmol of sodium dodecyl sulfate to solution A, and dissolving same with stirring; (3) dissolving 12-30 mmol of hexamethylenetetramine in 20 mL of ultrapure water to form solution B; (4) slowly dropwise adding solution B to solution A via a separatory funnel to form solution C, and stirring same for 0.5-1 h; and (5) further transferring same into a 100 mL reaction vessel, reacting same at 100-160° C. for 8-20 h, suction filtration and washing, and drying same at 40-60° C. in a vacuum oven, and further reacting same at 350-800° C. for 1-4 h in a muffle furnace.

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

A method for fabricating polymeric sheets containing microwires includes encapsulating at least a portion of individual lengths of a plurality of microwires in a non-conductive polymeric sheet while the microwires are attached to the substrate. The microwires are then detached from the substrate without removing the microwires from the polymeric sheet. The detaching step forms a separated polymeric sheet containing the detached microwires. Individual detached microwires of the plurality are approximately perpendicular to the separated polymeric sheet. A microwire array device includes a non-conductive polymeric sheet and a plurality of microwires. Individual microwires of the plurality have an independent length at least partially encapsulated by the polymeric sheet, are approximately perpendicular to the polymeric sheet, and contain magnetic ferrite.