Patent classifications
H01F1/009
Manganese-cobalt spinel oxide nanowire arrays
Manganese-cobalt (Mn—Co) spinel oxide nanowire arrays are synthesized at low pressure and low temperature by a hydrothermal method. The method can include contacting a substrate with a solvent, such as water, that includes Mn04- and Co2 ions at a temperature from about 60° C. to about 120° C. The method preferably includes dissolving potassium permanganate (KMn04) in the solvent to yield the Mn04- ions. the substrate is The nanoarrays are useful for reducing a concentration of an impurity, such as a hydrocarbon, in a gas, such as an emission source. The resulting material with high surface area and high materials utilization efficiency can be directly used for environment and energy applications including emission control systems, air/water purifying systems and lithium-ion batteries.
Patterned nanoparticle assembly methodology
Methods for forming a nanoparticle assembly are generally provided. The method can comprise applying a colloidal fluid to a surface of a magnetic media, wherein the colloidal fluid comprises magnetic nanoparticles, a surfactant, a trigger salt, and a carrier medium; and assembling the magnetic nanoparticles into a pattern through a magnetic force arising from the surface of the magnetic media.
Two-dimensional materials integrated with multiferroic layers
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.
TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.
Two-dimensional materials integrated with multiferroic layers
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.
Method for preparing magnetic iron oxide-graphene composite
The present invention relates to a method for preparing a magnetic iron oxide-graphene composite, a magnetic iron oxide-graphene composite prepared thereby and a composition for electromagnetic wave shielding including the same, and since graphene is prepared from a stage 1-GIC using FeCl.sub.3, magnetic particles in the form of FeO.sub.x are naturally formed on the surface of graphene during the preparation process. In addition, a magnetic material is formed on the surface of graphene while the defects of graphene are minimized, and thus the magnetic iron oxide-graphene composite prepared according to the present invention can be useful as an electromagnetic wave absorber.
Manganese-Cobalt Spinel Oxide Nanowire Arrays
Manganese-cobalt (MnCo) spinel oxide nanowire arrays are synthesized at low pressure and low temperature by a hydrothermal method. The method can include contacting a substrate with a solvent, such as water, that includes MnO4- and Co2 ions at a temperature from about 60 C. to about 120 C. The method preferably includes dissolving potassium permanganate (KMnO4) in the solvent to yield the MnO4 ions. the substrate is The nanoarrays are useful for reducing a concentration of an impurity, such as a hydrocarbon, in a gas, such as an emission source. The resulting material with high surface area and high materials utilization efficiency can be directly used for environment and energy applications including emission control systems, air/water purifying systems and lithium-ion batteries.
Magnetic diode in artificial magnetic honeycomb lattice
A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm.sup.2 to about 900 mm.sup.2.
Magnetic Diode in Artificial Magnetic Honeycomb Lattice
A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm.sup.2 to about 900 mm.sup.2.
METHOD FOR PREPARING MAGNETIC IRON OXIDE-GRAPHENE COMPOSITE
The present invention relates to a method for preparing a magnetic iron oxide-graphene composite, a magnetic iron oxide-graphene composite prepared thereby and a composition for electromagnetic wave shielding including the same, and since graphene is prepared from a stage 1-GIC using FeCl.sub.3, magnetic particles in the form of FeO.sub.x are naturally formed on the surface of graphene during the preparation process. In addition, a magnetic material is formed on the surface of graphene while the defects of graphene are minimized, and thus the magnetic iron oxide-graphene composite prepared according to the present invention can be useful as an electromagnetic wave absorber.