Patent classifications
H01F10/007
Magnetic field shielding sheet, method for manufacturing magnetic field shielding sheet, and antenna module using same
Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.
Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Materials for Spintronic Devices
Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.
Two-dimensional Dirac half-metal ferromagnets and ferromagnetic materials for spintronic devices
Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.
MAGNETICALLY ANISOTROPIC BINDER-FREE FILMS CONTAINING DISCRETE HEXAFERRITE NANOPLATELETS
Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.
Nanocomposite magnetic materials for magnetic devices and systems
Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.
NANOGRANULAR MAGNETIC FILM AND ELECTRONIC COMPONENT
A nanogranular magnetic film includes a structure including first phases comprised of nano-domains dispersed in a second phase. The first phases include at least one selected from the group consisting of Fe, Co, and Ni. The second phase includes at least one selected from the group consisting of O, N, and F. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A noble gas element is included at 0.20 at % or more and 0.80 at % or less.
INDUCTOR
An inductor includes a magnetic core portion and a coil portion. The magnetic core portion is a multilayer film in which a nanogranular magnetic film and a soft magnetic alloy film are alternately stacked. The nanogranular magnetic film has a structure in which nano-domains of a first phase are dispersed in a second phase. The first phase contains one or more selected from Fe and Co, and the second phase contains one or more selected from O, N, and F. The volume ratio of the first phase to the total volume of the first phase and the second phase is 60% or less. The soft magnetic alloy film contains one or more selected from Fe and Co. The total amount of Fe, Co, and Ni in the soft magnetic alloy film is 70 at % or more.
Magnetically anisotropic binder-free films containing discrete hexaferrite nanoplatelets
Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.
MAGNETIC TUNNEL JUNCTION COMPRISING AN INHOMOGENEOUS GRANULAR FREE LAYER AND ASSOCIATED SPINTRONIC DEVICES
A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.
Nanocomposite magnetic materials for magnetic devices and systems
Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.