A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies the conditional expression of 0.15≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 μm to 115 μm (but excluding 70 μm), the Nd content satisfies the conditional expression of 0.18≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 μm to 160 μm (but excluding 115 μm), the Nd content satisfies the conditional expression of 0.20≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 μm and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

Permanent magnets and method of making the same are provided. The magnets include a magnetic layer having an insulation layer disposed thereon. The insulation layer is formed via additive manufacturing techniques such as laser melting such that that it has discrete phases including a magnetic phase and an insulating phase.

The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an α-Fe phase and a Nd.sub.2Fe.sub.14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd.sub.2Fe.sub.14B, a soft magnetic phase contains Fe or Fe.sub.2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe.sub.2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd.sub.2Fe.sub.14B.

A MEMS system includes a first permanent-magnetic microstructure and a second permanent-magnetic microstructure. The first permanent-magnetic microstructure is movable along a first direction. The second permanent-magnetic microstructure is arranged to be spaced apart from the first permanent-magnetic microstructure, wherein, by moving the first permanent-magnetic microstructure along the first direction, the second permanent-magnetic microstructure or one or more elements of the second permanent-magnetic microstructure are either moved or actuated in a second direction or undergo rotation.

A method of producing an oppositely magnetized magnetic structure within or on a substrate material includes: generating first and second numbers of cavities within or on a substrate material and filling the first and second numbers of cavities with first and second hard magnetic materials, respectively exhibiting first and second coercive field strengths, wherein the second coercive field strength is smaller than the first coercive field strength. The method further includes magnetizing, in a first direction, the first and second arrangements of magnetic structures, by a magnetic field having a field strength that exceeds the first and second coercive field strengths. The method further magnetizes the second arrangement of hard magnetic structures in a second direction, which differs from the first direction, by a second magnetic field having a field strength below the first coercive field strength but greater than the second coercive field strength.

The present disclosure includes a thin film assembly comprising a substrate and an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film is a single crystal, wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions at a concentration of less than 100 parts per billion. The disclosure further includes a method of manufacturing a thin film assembly, the method comprising creating, on a substrate and with use of molecular beam epitaxy, an epitaxial crystalline thin film doped with the rare-earth ions at a concentration of less than 100 parts per billion.

A method of fabrication of nanostructured thin film includes depositing a Gd.sub.20Fe.sub.80 alloy by using the thermal evaporating technique on the top of a high-density nanoporous alumina template. In a particular embodiment, the high-density nanoporous alumina template has a pore diameter of 92 nm and interpore distance of 103 nm and the Gd.sub.20Fe.sub.80 nanostructured thin film has a layer thickness of 48 nm. The present method results in nanostructured GdFe thin films with large perpendicular magnetic energy density of 4.8 erg/cm.sup.2, which is 15 times higher than obtained in the conventional ferromagnetic alloy thin films with PMA.

A magnetic current collector includes a permanent magnet material layer. In the permanent magnet material layer, remanence intensity of a permanent magnet material is 0 T to 2 T. The magnetic current collector can introduce a magnetic field into the lithium metal battery. The magnetic field interacts electromagnetically with an electric field exerted by the battery to quicken a mass transfer process of lithium ions at an interface between a negative electrode and an electrolytic solution, homogenize a current density generated by a lithium-ion flow on a surface of the negative electrode, quicken a mass transfer process of lithium ions in a direction parallel to the current collector, and homogenize the distribution of lithium ions, so as to suppress lithium dendrites and improve the cycle performance of the lithium metal battery.