Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second atomic concentration C2 at a second depth d2 from the first major surface, d2>d1, C2/C1≥5.

A sensor may include a core and a coil. The core may include a rectangular substrate, a layer of magnetically-permeable material disposed on the substrate, and an adhesive rigidly coupling two ends of the substrate so as to form a tube with the rectangular substrate. The coil may be wound on the tube. The core may further include a layer of radiopaque material. The core may further include a flex pad for electrically coupling the coil with an external system.

A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second atomic concentration C2 at a second depth d2 from the first major surface, d2>d1, C2/C1≥5.

A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

A magnetic core for an inductive component is produced by thin-film technology, wherein the magnetic core consists of at least two different magnetic materials.

A nanogranular magnetic film includes a structure including first phases comprised of nano-domains dispersed in a second phase. The first phases include at least one selected from the group consisting of Fe, Co, and Ni. The second phase includes at least one selected from the group consisting of O, N, and F. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. The nanogranular magnetic film has a porosity of 0.17 or more and 0.30 or less.

An inductor includes a magnetic core portion and a coil portion. The magnetic core portion is a multilayer film in which a nanogranular magnetic film and a soft magnetic alloy film are alternately stacked. The nanogranular magnetic film has a structure in which nano-domains of a first phase are dispersed in a second phase. The first phase contains one or more selected from Fe and Co, and the second phase contains one or more selected from O, N, and F. The volume ratio of the first phase to the total volume of the first phase and the second phase is 60% or less. The soft magnetic alloy film contains one or more selected from Fe and Co. The total amount of Fe, Co, and Ni in the soft magnetic alloy film is 70 at % or more.

Reduction of the S/N in an output from a magnetic sensor using the magnetic impedance effect is suppressed. A magnetic sensor 1 is provided with a sensitive element 31 including: plural soft magnetic material layers 105; and a nonmagnetic amorphous metal layer 106 provided between the plural soft magnetic material layers 105, wherein the soft magnetic material layers 105 facing each other with the nonmagnetic amorphous metal layer 106 interposed therebetween are antiferromagnetically coupled to sense a magnetic field by a magnetic impedance effect.

A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).