A sensor may include a core and a coil. The core may include a rectangular substrate, a layer of magnetically-permeable material disposed on the substrate, and an adhesive rigidly coupling two ends of the substrate so as to form a tube with the rectangular substrate. The coil may be wound on the tube. The core may further include a layer of radiopaque material. The core may further include a flex pad for electrically coupling the coil with an external system.

A magnetic core for an inductive component is produced by thin-film technology, wherein the magnetic core consists of at least two different magnetic materials.

Sensitivity of a magnetic sensor using the magnetic impedance effect is improved. A magnetic sensor includes: a non-magnetic substrate; a sensitive element provided on the substrate, including a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect; and a protrusion part including a soft magnetic material and protruding from an end portion in the longitudinal direction of the sensitive element.

A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Sensitivity of a magnetic sensor using the magnetic impedance effect is improved. A magnetic sensor includes: a non-magnetic substrate; a sensitive element provided on the substrate, including a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect; and a protrusion part including a soft magnetic material and protruding from an end portion in the longitudinal direction of the sensitive element.

A method of manufacturing a magnetoresistive random access memory (MRAM). The method includes forming a first CoFeB layer of the MTJ devices, the first CoFeB layer being amorphous and forming a magnesium oxide (MgO) layer of the MTJ devices over the first CoFeB layer. Further, there is a forming of a second CoFeB layer of the MTJ devices, the second CoFeB layer being amorphous over the MgO layer, and annealing the MTJ devices. The first and second CoFeB layers are crystallized by the annealing, and the MgO layer is poly-crystalline in which a (001) crystal plane is preferentially oriented.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

An inductor includes a magnetic core portion and a coil portion. The magnetic core portion is a multilayer film in which a nanogranular magnetic film and a soft magnetic alloy film are alternately stacked. The nanogranular magnetic film has a structure in which nano-domains of a first phase are dispersed in a second phase. The first phase contains one or more selected from Fe and Co, and the second phase contains one or more selected from O, N, and F. The volume ratio of the first phase to the total volume of the first phase and the second phase is 60% or less. The soft magnetic alloy film contains one or more selected from Fe and Co. The total amount of Fe, Co, and Ni in the soft magnetic alloy film is 70 at % or more.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.