Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

A soft magnetic alloy contains Fe and at least one of metalloid element. An amorphous material and a nanocrystal having a grain size of 5 to 30 nm are mixed. A coefficient of determination between an atomic concentration of Fe and an atomic concentration of the at least one of metalloid element is 0.700 or more.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a substrate, a seed layer over the substrate and a magnetic layer over the seed layer. The magnetic layer includes a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

A multilayer magnetic sheet comprises ten or more layers of magnetic strips each formed in a band shape with a short side and a long side. The magnetic strips are aligned and arranged in a plate shape in each of the layers such that the long sides of the magnetic strips are adjacent to each other. The layers comprise first layers, in which the long sides of the adjacent magnetic strips overlap, and second layers, in which the long sides of the adjacent magnetic strips do not overlap. The first layers comprise at least two stacked layers. A position of the long side in one layer included in the second layers is separated from a position of the long side in another layer included in the second layers by 0.5 mm or more in a direction in which the short side extends.

Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.