Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a fixed layer that is magnetic and a tunnel barrier layer overlying the fixed layer, where the tunnel barrier layer is non-magnetic. A total free layer overlies the tunnel barrier layer, where the total free layer includes a plurality of individual free layers, wherein each of the plurality of individual free layers includes one or more of cobalt, iron, or boron, and where each of the plurality of individual free layers is magnetic. At least one of the plurality of individual free layers includes an atomic ratio of cobalt to iron that is from about 0.9/1 to about 1.1/1.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

An iron core for a contactor and a contactor. The iron core includes an iron core body, the iron core body includes a plurality of silicon steel sheets fixed together by lamination, the iron core body further includes a metal rod, the metal rod penetrates and is fixed to at least some of the plurality of silicon steel sheets, and a material of the metal rod is one or more selected from the group consisting of aluminum, aluminum alloy, magnesium, magnesium alloy, zinc and zinc alloy.