A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

A magnetic current collector includes a permanent magnet material layer. In the permanent magnet material layer, remanence intensity of a permanent magnet material is 0 T to 2 T. The magnetic current collector can introduce a magnetic field into the lithium metal battery. The magnetic field interacts electromagnetically with an electric field exerted by the battery to quicken a mass transfer process of lithium ions at an interface between a negative electrode and an electrolytic solution, homogenize a current density generated by a lithium-ion flow on a surface of the negative electrode, quicken a mass transfer process of lithium ions in a direction parallel to the current collector, and homogenize the distribution of lithium ions, so as to suppress lithium dendrites and improve the cycle performance of the lithium metal battery.

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

An object of the present invention is to provide a magneto-optical material capable of exhibiting the Faraday effect even though no magnetic field is applied. The magneto-optical material of the present invention has a nanogranular structure in which magnetic nanoparticles are dispersed in a fluoride matrix, and can exhibit Faraday properties without requiring the application of a magnetic field because the magnetic nanoparticles are configured by a magnetic material that has residual magnetization and consists of any of a FePt alloy, a CoPt alloy, a FeCoNiAl alloy, a Co ferrite, or a Ba ferrite.

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500 C. or less, such as 250 C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.