Disclosed herein is a coil component that includes an element body made of a first magnetic material, a coil conductor embedded in the element body, and first and second magnetic films made of a second magnetic material having higher permeability than that of the first magnetic material. The element body has an upper surface crossing a coil axis of the coil conductor and first and second side surfaces extending substantially parallel to the coil axis. The first magnetic film is formed on the upper surface and first side surface of the element body, and the second magnetic film is formed on the upper surface and second side surface of the element body.

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density J.sub.O for oscillation, to a magnetoresistive effect element for a time T.sub.P, and then executes a second step of applying a current, which has a second current density J.sub.S smaller than the first current density and not smaller than the critical current density J.sub.O for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time T.sub.P in the first step is J.sub.P, a critical current density for magnetization reversal of the magnetoresistive effect element is J.sub.R, and a magnetization reversal time of the magnetoresistive effect element is T.sub.R: $\begin{array}{cc}\frac{0.1\times T_R\left(J_R-J_O\right)}{J_p-J_S}<T_p<0.9\times T_R\frac{J_R-J_O}{J_S-J_O}& \end{array}$

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density J.sub.O for oscillation, to a magnetoresistive effect element for a time T.sub.P, and then executes a second step of applying a current, which has a second current density J.sub.S smaller than the first current density and not smaller than the critical current density J.sub.O for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time T.sub.P in the first step is J.sub.P, a critical current density for magnetization reversal of the magnetoresistive effect element is J.sub.R, and a magnetization reversal time of the magnetoresistive effect element is T.sub.R: $\begin{array}{cc}\frac{0.1\times T_R\left(J_R-J_O\right)}{J_p-J_S}<T_p<0.9\times T_R\frac{J_R-J_O}{J_S-J_O}& \end{array}$

A magnetic particle (30, 70) has a layered structure (6, 56) between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized layer(s). The ratio of a lateral dimension of the one or more magnetized layers to the aggregate thickness of the magnetized layer or layers is greater than 500. A plurality of such magnetic particles (30, 70) can be functionalised and marked with readable codes (16, 66) corresponding to the functionalisation, for use for performing assays such as bioassays.

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

A multilayer magnetic sheet comprises ten or more layers of magnetic strips each formed in a band shape with a short side and a long side. The magnetic strips are aligned and arranged in a plate shape in each of the layers such that the long sides of the magnetic strips are adjacent to each other. The layers comprise first layers, in which the long sides of the adjacent magnetic strips overlap, and second layers, in which the long sides of the adjacent magnetic strips do not overlap. The first layers comprise at least two stacked layers. A position of the long side in one layer included in the second layers is separated from a position of the long side in another layer included in the second layers by 0.5 mm or more in a direction in which the short side extends.

A magnetic particle (30, 70) has a layered structure (6, 56) between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more non- magnetic layer(s) and one or more magnetized layer(s). The ratio of a lateral dimension of the one or more magnetized layers to the aggregate thickness of the magnetized layer or layers is greater than 500. A plurality of such magnetic particles (30, 70) can be functionalised and marked with readable codes (16, 66) corresponding to the functionalisation, for use for performing assays such as bioassays.

Provided is a magnet including a yoke portion that contains a soft magnetic material, and a magnet portion that is formed on a main surface of the yoke portion and contains a hard magnetic material. An interface of the magnet portion and the yoke portion has an uneven shape.

Provided is a magnetoresistance effect element configured by laminating a first electrode, a magnetization pinned layer having a fixed magnetization direction, a first insulating layer, a magnetization free layer having a variable magnetization direction, a second insulating layer, and a second electrode in order, in which the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer, at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and either the non-magnetic layer or the magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.