A ferromagnetic-polymer composite material comprises a polymer and a plurality of ferromagnetic film platelets disposed in the polymer. Each ferromagnetic film platelet comprises first and second insulator layers and a ferromagnetic layer disposed between the first and second insulator layers. The ferromagnetic layer can be magnetically anisotropic in which a hard axis of magnetization is aligned parallel to a plane that passes through and parallel to an interface between the first insulator layer and the ferromagnetic layer. The easy and/or hard axes of magnetization in the ferromagnetic film platelets can be aligned. An inductor can have a core formed of the ferromagnetic-polymer composite material.

A multiplier device for binary magnetic applied fields uses Interlayer Exchange Coupling (IEC) structure where two layers of ferromagnetic material are separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. A plurality of regions on a top surface are activated with a magnetic field in a first direction for a 1 value and in an opposite direction for a 0 value, the multiplication result presented as magnetic field direction on a plurality of output ferromagnetic regions.

Acoustically mediated pulsed radiation sources, phased arrays incorporating the radiation sources, and methods of using the radiation sources and phased arrays to generate electromagnetic radiation via magnetic dipole emission are provided. The radiation sources are based on a superlattice heterostructure that supports in-phase magnetic dipole emission from a series of magnetic insulator layers disposed along the length of the heterostructure.

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction, a first insulating layer provided along a side surface of the stacked structure and having an upper end located at a position lower than an upper end of the side surface of the stacked structure, and a second insulating layer covering the first insulating layer and having an upper end located at a position higher than the upper end of the first insulating layer.

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction, a first insulating layer provided along a side surface of the stacked structure and having an upper end located at a position lower than an upper end of the side surface of the stacked structure, and a second insulating layer covering the first insulating layer and having an upper end located at a position higher than the upper end of the first insulating layer.

A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

A multiplier device for binary magnetic applied fields uses Interlayer Exchange Coupling (IEC) structure where two layers of ferromagnetic material are separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. A plurality of regions on a top surface are activated with a magnetic field in a first direction for a 1 value and in an opposite direction for a 0 value, the multiplication result presented as magnetic field direction on a plurality of output ferromagnetic regions.

A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.