The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.

The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.

A method for fabricating a magnetic device comprises providing a layer stack, the layer stack comprising a substrate, a first ferromagnetic layer disposed above the substrate, the first ferromagnetic layer comprising a uniaxial magnetic anisotropy including an easy axis, a non-magnetic layer disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the non-magnetic layer, the second ferromagnetic layer comprising a unidirectional anisotropy, and an antiferromagnetic layer disposed on the second ferromagnetic layer, the antiferromagnetic layer comprising a Nel temperature T.sub.N; heating the layer stack above the Nel temperature T.sub.N of the antiferromagnetic layer; applying a magnetic field H.sub.CL to the layer stack, the magnetic field H.sub.CL comprising a magnetic field direction having an arbitrary angle with respect to the easy axis; cooling the layer stack below the Nel temperature T.sub.N of the antiferromagnetic layer with the magnetic field H.sub.CL applied; and removing the magnetic field H.sub.CL.