A computing device including a logic track including two logic-track magnetic domains separated by a logic-track domain wall, an input track arranged crossing the logic track at a first position of the logic track, and an output track arranged crossing the logic track at a second position of the logic track near the logic-track domain wall. The input track includes at least one input-track magnetic domain, and each of the at least one input-track magnetic domain includes at least one input-track storage unit configured to store binary 0 or 1. The output track includes at least one output-track magnetic domain, and each of the at least one output-track magnetic domain includes at least one output-track storage unit configured to store binary 0 or 1.

According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.

A computing device including a logic track including two logic-track magnetic domains separated by a logic-track domain wall, an input track arranged crossing the logic track at a first position of the logic track, and an output track arranged crossing the logic track at a second position of the logic track near the logic-track domain wall. The input track includes at least one input-track magnetic domain, and each of the at least one input-track magnetic domain includes at least one input-track storage unit configured to store binary 0 or 1. The output track includes at least one output-track magnetic domain, and each of the at least one output-track magnetic domain includes at least one output-track storage unit configured to store binary 0 or 1.

A spin wave control device includes a first magnetic layer, a second magnetic layer arranged above the first magnetic layer, and a capping layer overlapping a portion of the second magnetic layer. The first magnetic layer has a magnetization pointing in a first direction and the second magnetic layer has a magnetization pointing in a second direction that is approximately opposite to the first direction. The capping layer has a magnetization pointing approximately in the first direction or approximately in the second direction.

A superparamagnetic tunnel junction element and a computing system using same, wherein the tunnel junction element has excellent operational stability against an external magnetic field and is suitable for the computing system based on probabilistic computing. The superparamagnetic tunnel junction element includes a first ferromagnetic layer group containing a ferromagnetic material, a second ferromagnetic layer group containing a ferromagnetic material, and a barrier layer disposed between the first ferromagnetic layer group and the second ferromagnetic layer group, wherein the first ferromagnetic layer group 14 includes a (1-1)th ferromagnetic layer, a (1-2)th ferromagnetic layer, and a first nonmagnetic coupling layer, the (1-1)th ferromagnetic layer is made of a ferromagnetic material, the magnetization direction thereof changes with a first time constant, the first time constant is one second or shorter, and the first nonmagnetic coupling layer contains at least one of Ru, Ir, Rh, Cr, and Cu.

A superparamagnetic tunnel junction element and a computing system using same, wherein the tunnel junction element has excellent operational stability against an external magnetic field and is suitable for the computing system based on probabilistic computing. The superparamagnetic tunnel junction element includes a first ferromagnetic layer group containing a ferromagnetic material, a second ferromagnetic layer group containing a ferromagnetic material, and a barrier layer disposed between the first ferromagnetic layer group and the second ferromagnetic layer group, wherein the first ferromagnetic layer group 14 includes a (1-1)th ferromagnetic layer, a (1-2)th ferromagnetic layer, and a first nonmagnetic coupling layer, the (1-1)th ferromagnetic layer is made of a ferromagnetic material, the magnetization direction thereof changes with a first time constant, the first time constant is one second or shorter, and the first nonmagnetic coupling layer contains at least one of Ru, Ir, Rh, Cr, and Cu.