An inductor component includes an element body including magnetic powder and having first and second principal surfaces; an inductor wiring in the element body; a first vertical wiring that is in the element body, is connected to a first end portion of the inductor wiring, and extends to the first principal surface; a second vertical wiring that is in the element body, is connected to a second end portion of the inductor wiring, and extends to the first principal surface; and first and second external terminals exposed on the first principal surface and connected to the first and second vertical wirings, respectively. The magnetic powder contains an Fe element as a main component, and the first principal surface has an oxidized region, in which an oxide film of oxidized particles of the magnetic powder, is exposed and a non-oxidized region in which particles of the magnetic powder are exposed.

An inductor unit includes a conductive structure, a first magnetic element and an insulating layer. The conductive structure has a bottom conductive layer, a top conductive layer, and a first side conductive layer extending from the bottom conductive layer to the top conductive layer. The first magnetic element is disposed on the bottom conductive layer of the conductive structure. The insulating layer is disposed on the bottom conductive layer of the conductive structure, wherein the insulating layer covers and surrounds the first magnetic element. The circuit structure including the inductor unit and the methods for manufacturing the same are also provided.

Stacked magnetic cores that can achieve high density with a small footprint, as well as methods of fabricating and using the same, are provided. A stacked magnetic core can be fabricated by depositing nanomagnetic films with control in composition and nanostructure via a continuous electroplating process. The magnetic films are interspersed with thin adhesive films (that can be insulating) in an automated roll-to-roll process. That is, the magnetic films and adhesive films are disposed in an alternating fashion. The adhesive films can keep the magnetic films completely electrically isolated from each other, while also adhering adjacent magnetic films to each other.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

A laminated electronic component in which magnetic body layers and conductor patterns are laminated, and the conductor patterns between the magnetic body layers are connected to form a coil within a laminated body. The magnetic body layers are formed from a metal magnetic body. At least one lead-out conductor pattern of the coil is connected with an external terminal formed on an undersurface of the laminated body through a conductor formed at a corner of the laminated body.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

An electronic component includes a magnetic body containing magnetic metal powder; and external electrodes disposed on an outer portion of the magnetic body. The external electrodes include first plating layers in direct contact with the magnetic body.

A coil component in which occurrence of plating elongation is further suppressed and an inductance value is higher. A coil component includes an element body including metal magnetic particles, a coil conductor inside the element body, and a plurality of external electrodes on a surface of the element body. The element body has a substantially rectangular parallelepiped shape including upper and lower surfaces substantially orthogonal to a winding axis of the coil conductor, first and second side surfaces facing each other, and third and fourth side surfaces facing each other. An average particle diameter of each of metal magnetic particles constituting the upper surface, metal magnetic particles constituting the lower surface, metal magnetic particles constituting the first side surface, and metal magnetic particles constituting the second side surface is smaller than an average particle diameter of metal magnetic particles existing inside a winding portion of the coil conductor.

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.