Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.

The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

An apparatus is provided to improve spin injection efficiency from a magnet to a spin orbit coupling material. The apparatus comprises: a first magnet; a second magnet adjacent to the first magnet; a first structure comprising a tunneling barrier; a third magnet adjacent to the first structure; a stack of layers, a portion of which is adjacent to the third magnet, wherein the stack of layers comprises spin-orbit material; and a second structure comprising magnetoelectric material, wherein the second structure is adjacent to the first magnet.

A semiconductor device includes a base structure of an embedded memory device including a bottom electrode contact (BEC) landing pad within a memory area of the embedded memory device and a first metallization level having at least a first conductive line within a logic area of the embedded memory device, a cap layer disposed on the base structure, a BEC disposed through the cap layer on the BEC landing pad, a memory pillar disposed on the BEC and the cap layer, encapsulation layers encapsulating the memory pillar to protect the memory stack, and a second metallization level including a second conductive line surrounding the top electrode, a via disposed on the first conductive line such that the second via is below the top electrode, and a third conductive line disposed on the via to enable the memory pillar to be fitted between the first and second metallization levels.

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

In one aspect, a method includes forming a metal layer on a substrate, wherein the metal layer comprises a first coil, forming a planarized insulator layer on the metal layer, forming at least one via in the planarized insulator layer, depositing a magnetoresistance (MR) element on the planarized insulator layer, and forming a second coil extending above the MR element. The at least one via electrically connects to the metal layer on one end and to MR element on the other end.

Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

Acoustically mediated pulsed radiation sources, phased arrays incorporating the radiation sources, and methods of using the radiation sources and phased arrays to generate electromagnetic radiation via magnetic dipole emission are provided. The radiation sources are based on a superlattice heterostructure that supports in-phase magnetic dipole emission from a series of magnetic insulator layers disposed along the length of the heterostructure.

The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.