Patent classifications
H01G4/10
Integrated energy storage component
An integrated energy storage component that includes a substrate supporting a contoured layer having a region with a contoured surface such as elongated pores. A stack structure is provided conformally over the contoured surface of this region. The stack is a single or repeated instance of MOIM layers, or MIOM layers, the M layers being metal layers, or a quasi-metal such as TiN, the O layers being oxide layers containing ions, and the I layer being an ionic dielectric. The regions having a contoured surface may be formed of porous anodized alumina.
Integrated energy storage component
An integrated energy storage component that includes a substrate supporting a contoured layer having a region with a contoured surface such as elongated pores. A stack structure is provided conformally over the contoured surface of this region. The stack is a single or repeated instance of MOIM layers, or MIOM layers, the M layers being metal layers, or a quasi-metal such as TiN, the O layers being oxide layers containing ions, and the I layer being an ionic dielectric. The regions having a contoured surface may be formed of porous anodized alumina.
CAPACITOR STRUCTURE AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF
A capacitor structure, a method for manufacturing a capacitor structure and a method for operating a capacitor structure are provided. The capacitor structure includes a first electrode and a second electrode; a dielectric layer between the first electrode and the second electrode; and an oxygen donor layer between the dielectric layer and the first electrode. An oxygen concentration of the oxygen donor layer increases along a thickness direction from a first surface proximal to the dielectric layer to a second surface proximal to the first electrode.
Dielectric powder and multilayer capacitor using the same
A dielectric powder includes a core-shell structure including a core region formed in an inner portion thereof and a shell region covering the core region. The core region includes barium titanate (BaTiO.sub.3) doped with a metal oxide, and the shell region is formed of a ferroelectric material.
Dielectric powder and multilayer capacitor using the same
A dielectric powder includes a core-shell structure including a core region formed in an inner portion thereof and a shell region covering the core region. The core region includes barium titanate (BaTiO.sub.3) doped with a metal oxide, and the shell region is formed of a ferroelectric material.
AMORPHOUS DIELECTRIC, CAPACITOR ELEMENT, AND ELECTRONIC DEVICE
An amorphous dielectric includes a compound represented by A.sub.1+αBO.sub.xN.sub.y. −0.3≤α≤0.3, 0<x≤3.50, 0≤y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.
Metal insulator metal (MIM) structure and manufacturing method thereof
A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.
Capacitor structure and semiconductor devices having the same
A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
Capacitor structure and semiconductor devices having the same
A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
Method of producing a multi-layer ceramic electronic component
A method of producing a multi-layer ceramic electronic component includes: producing a multi-layer unit including ceramic layers that are laminated in a first direction, internal electrodes that are disposed between the ceramic layers, and a side surface that faces in a second direction orthogonal to the first direction, the internal electrodes being exposed on the side surface; sintering the multi-layer unit; and forming a side margin on the side surface of the sintered multi-layer unit.