A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

Provided is a dielectric composition which includes, as a main component, a complex oxide represented by a general formula A.sub.aB.sub.bC.sub.4O.sub.15+α and having a tungsten bronze structure, wherein “A” includes at least Ba, “B” includes at least Zr, “C” includes at least Nb, “a” is 3.05 or higher, and “b” is 1.01 or higher. In the dielectric composition, when the total number of atoms occupying M2 sites in the tungsten bronze structure is set to 1, the proportion of “B” is 0.250 or higher. In addition, in the dielectric composition, an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.

A dielectric composition including a complex oxide represented by a general formula of A.sub.aB.sub.bC.sub.4O.sub.15+α as a main component, in which “A” at least includes Ba, “B” at least includes Zr, “C” at least includes Nb, “a” is 3.05 or more, and “b” is 1.01 or more.

A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.

A dielectric composition comprising a complex oxide represented by a general formula of A.sub.aB.sub.bC.sub.4O.sub.15+ and an oxide including aluminum, in which A at least includes Ba, B at least includes Zr, and C at least includes Nb, a is 2.50 or more and 3.50 or less, and b is 0.50 or more, and 1.50 or less.

A dielectric composite includes: at least one first dielectric material represented by Chemical Formula 1, and at least one second dielectric material represented by Chemical Formula 2, wherein the first dielectric material has at least one first crystal structure and the second dielectric material has a second crystal structure that is different from the first crystal structure, and the first dielectric material and the second dielectric material are agglomerated with each other,
A.sup.11.sub.1-xA.sup.12.sub.xB.sup.1.sub.2O.sub.6Chemical Formula 1
A.sup.21.sub.2(1-y)A.sup.22.sub.2yB.sup.2.sub.2O.sub.7.Chemical Formula 2

Provided is a dielectric composition which includes, as a main component, a complex oxide represented by a general formula A.sub.aB.sub.bC.sub.4O.sub.15+ and having a tungsten bronze structure, wherein A includes at least Ba, B includes at least Zr, C includes at least Nb, a is 3.05 or higher, and b is 1.01 or higher. In the dielectric composition, when the total number of atoms occupying M2 sites in the tungsten bronze structure is set to 1, the proportion of B is 0.250 or higher. In addition, in the dielectric composition, an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00 in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.50, 0.50s+t1.00, 0.50<x1.50, 0.30a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

[Object] provide a dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. [Solving Means] A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70s1.00, 0t0.30, 0.70s+t1.00, 0x0.50, 0.10a1.00, and 0h1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.