A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.

The present invention relates to a ceramic, to a process for preparing the ceramic and to the use of the ceramic as a dielectric in a capacitor.

A dielectric composition is provided. The dielectric composition includes: a main component made of: a first complex oxide expressed by a chemical formula {K(Ba.sub.1-xSr.sub.x).sub.2Nb.sub.5O.sub.15}; and a second complex oxide expressed by a chemical formula that differs the chemical formula of the first complex oxide. The second complex oxide is a complex oxide expressed by one of chemical formulae: {(Ca.sub.1-ySr.sub.y)(Zr.sub.1-zTi.sub.z)O.sub.3}; {Ba(Ti.sub.1-uZr.sub.u)O.sub.3}; {(Ca.sub.1-vSr.sub.v)TiSiO.sub.5}; and {(Ba.sub.1-wRe.sub.2w/3)Nb.sub.2O.sub.6}, x satisfies 0.35≦x≦0.75, and a satisfies 0.25≦a≦0.75 when a molar ratio between the first and second complex oxides is defined by a:b in an order and a+b=1.00.

A multilayer ceramic electronic component includes a ceramic body including a plurality of dielectric layers stacked on each other and having first and second surfaces opposing each other in a first direction, third and fourth surfaces opposing each other in a second direction, parallel to a stacking direction and connected to the first and second surfaces, and fifth and sixth surfaces opposing each other in a third direction and connected to the first to fourth surfaces, first and second external electrodes disposed on the first and second surfaces of the ceramic body, respectively, first and second conductive thin films disposed on at least one of the third and fourth surfaces, connected to the first and second external electrodes, respectively, and having a thickness lower than that of the first and second external electrodes, and first and second solder preventing films disposed on the first and second external electrodes, respectively.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1

Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)

wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

The present invention relates to a ceramic material for a multilayer capacitor. The ceramic material has a composition according to the following general formula:

Pb.sub.(y−1.5a−0.5b+c+0.5d−0.5e−f)Ca.sub.aA.sub.b(Zr.sub.1−xTi.sub.x).sub.(1−c−d−e−d)E.sub.cFe.sub.dNb.sub.eW.sub.fO.sub.3,

where
A is one or more of the group of Na, K and Ag;
E is one or more of the group of Cu, Ni, Hf, Si and Mn; and
0<a<0.14,
0.05≤x≤0.3,
0≤b≤0.12,
0<c≤0.12,
0≤d≤0.12,
0≤e≤0.12,
0≤f≤0.12,
0.9≤y≤1.5 and
0.001<b+c+d+e+f
applies.

Further, the invention includes a capacitor comprising the described ceramic material.

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:

xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3   [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.

According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided.