An integrated energy storage component that includes a substrate supporting a contoured layer having a region with a contoured surface such as elongated pores. A stack structure is provided conformally over the contoured surface of this region. The stack is a single or repeated instance of MOIM layers, or MIOM layers, the M layers being metal layers, or a quasi-metal such as TiN, the O layers being oxide layers containing ions, and the I layer being an ionic dielectric. The regions having a contoured surface may be formed of porous anodized alumina.

The insulating member is integrated with only one of the busbars by insert molding in which one of opposing plate members in either one of the busbars is used as an insert target. The insulating member includes an insulation active portion, a reinforcing portion and a connecting portion. The insulation active portion is disposed on a back-surface side of one of the opposing plate portions and is interposed between the back-surface side and the other one of the opposing plate portions. The reinforcing portion is disposed on the front-surface side of the one of the opposing plate portions.

The connecting portion serves to connect the insulation active portion and the reinforcing portion into an integral unit. In the insulating member, lower end regions of the insulation active portion, reinforcing portion and connecting portion, which are close to the capacitor element and extending from an upper-surface side to a lower-surface side of a side plate portion, are embedded in a mold resin that covers the side plate portion.

A structural body that includes: a substrate; a plurality of fibrous materials, each of the plurality of fibrous material including a fibrous core material and a covering layer that covers the fibrous core material such that an exposed portion of the fibrous core material is formed at an end portion thereof; and an adhesive layer that bonds the substrate and the end portion of each of the plurality of fibrous materials to each other such that a boundary between the covering layer and the exposed portion is located inside the adhesive layer.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

An amorphous dielectric includes a compound represented by A.sub.1+αBO.sub.xN.sub.y. −0.3≤α≤0.3, 0<x≤3.50, 0≤y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

A HfO2-based ferroelectric capacitor and a preparation method therefor, and a HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserting an Al.sub.2O.sub.3 intercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO.sub.2-based ferroelectric capacitor comprises a substrate layer, a lower electrode, a dielectric layer, an Al.sub.2O.sub.3 intercalation layer, an upper electrode and a metal protection layer from bottom to top. The memory window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.

An electronic component includes a multilayer body including a multilayer main body including end surfaces at which internal nickel electrode layers are exposed, side gap portions, external nickel layers on the end surfaces of the multilayer body, and external copper electrode layers covering the end surfaces on which the external nickel layers are provided. A nickel-based oxide and/or a silicon-based oxide are provided between the external nickel layer and the external copper electrode layer. A nickel layer and a tin layer are provided outside the external copper electrode layer. In a cross section passing through a middle of the electronic component in the width direction and extending in the length direction and the lamination direction, a relationship of about 0.2≤Tea/Tem≤about 1.1 is satisfied.

Provided is an electrolytic nickel foil including, on at least one surface thereof, a flat surface having the following surface roughness: a Ra of 0.05 μm or less, a Rz of 0.2 μm or less, and a Rt of 0.5 μm or less and a glossiness of 200 GU or more as determined by measuring a 60° specular reflection angle.