A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO.sub.2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

A multi-layer ceramic electronic component includes: a ceramic body including a multi-layer unit having a side surface facing in a direction of a first axis and including internal electrodes laminated in a direction of a second axis orthogonal to the first axis and having end portions on the side surface, and a side margin including a first inner layer adjacent to the side surface and including a first region containing a glass component, a first outer layer outside of the first inner layer, and a ridge positioned at an end portion of the first outer layer in the direction of the second axis and including a second region containing a glass component at a lower concentration than a concentration of the glass component of the first region, the side margin having a dimension of 13 μm or less in the direction of the first axis; and an external electrode.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

A glass that contains Si, B, Al, and Zn. The glass has SiO.sub.2 at a content of 15% by weight to 65% by weight, B.sub.2O.sub.3 at a content of 11% by weight to 30% by weight, Al.sub.2O.sub.3, and ZnO, wherein a weight ratio of the SiO.sub.2 to the B.sub.2O.sub.3 (SiO.sub.2/B.sub.2O.sub.3) is 1.21 or higher, and a weight ratio of the Al.sub.2O.sub.3 to the ZnO (Al.sub.2O.sub.3/ZnO) is 0.75 to 1.64, and wherein an alkaline-earth metal is excluded as a material contained in the glass.

The present invention provides a method of fabrication and device made by preparing a photosensitive glass substrate comprising at least silica, lithium oxide, aluminum oxide, and cerium oxide, masking a design layout comprising one or more holes or post to form one or more high surface area capacitive device for monolithic system level integration on a glass substrate.

A multilayer ceramic capacitor includes: a multilayer chip having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and each of the internal electrode layers is alternately exposed to two end faces of the multilayer chip, a main component of the plurality of dielectric layers being a ceramic; and a pair of external electrodes that are formed on the two end faces; wherein: the pair of external electrodes have a structure in which a plated layer is formed on a ground layer; a main component of the ground layer is a metal or an alloy including at least one of Ni and Cu; and at least a part of a surface of the ground layer on a side of the plated layer includes an interposing substance including Mo.

Prismatic polymer monolithic capacitor structure including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The chemical composition of polymer dielectric and the electrode resistivity parameters are chosen to maximize the capacitor self-healing properties and energy density, and to assure the stability of the capacitance and dissipation factor over the operating temperature range. The glass transition temperature of the polymer dielectric is specifically chosen to avoid mechanical relaxation from occurring in the operating temperature range, which prevents high moisture permeation into the structure (which can lead to higher dissipation factor and electrode corrosion). The geometry and shape of the capacitor are appropriately controlled to minimize losses when the capacitor is exposed to pulse and alternating currents.

An electronic component including a substrate, a capacitor lower electrode disposed on the substrate, an inorganic dielectric layer disposed on the substrate to cover the lower electrode, a capacitor upper electrode disposed directly on the inorganic dielectric layer and facing the lower electrode via the inorganic dielectric layer, and a coil electrically connected to the lower electrode or the upper electrode. The upper surface of the inorganic dielectric layer is flat.

An electronic component including a substrate, a capacitor lower electrode disposed on the substrate, an inorganic dielectric layer disposed on the substrate to cover the lower electrode, a capacitor upper electrode disposed directly on the inorganic dielectric layer and facing the lower electrode via the inorganic dielectric layer, and a coil disposed on the inorganic dielectric layer and electrically connected to the lower electrode or the upper electrode.

The present invention pertains to a glass characterized by: containing 72-82% of Li.sup.+, 0-21% of Si.sup.4+, and 0-28% of B.sup.3+ in terms of cation %; and containing at least 70% and less than 100% of O.sup.2− and more than 0% and at most 30% of Cl.sup.−, containing at least 94% and less than 100% of O.sup.2− and more than 0% and at most 6% of S.sup.2−, or containing at least 64% and less than 100% of O.sup.2−, more than 0% and at most 30% of Cl.sup.−, and more than 0% and at most 6% of S.sup.2−, in terms of anion %.