The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30° C., a volume resistivity of 5E+15 Ω.Math.cm or higher at 30° C., and a breakdown strength of 500 V/μm or higher.

The present invention provides monomers, analogs, and/or derivatives of bisphenols substituted with one or more fluoromethyl groups. These monomers, analogs, and/or derivatives can be used to form oligomers and/or polymers, which in turn can be used to make compounds with dielectric properties suitable for dielectric materials, including for example, use in energy dense capacitors. In a preferred embodiment, the compounds can comprise a polycarbonate of a homopolymer, copolymer, and/or terpolymer of a bisphenol with one or more fluoromethyl substitution groups. In an aspect of the invention the compounds chosen can be selected based on various desired characteristics, including, for example, their energy density, glass transition temperature, dielectric loss, and/or dipole density.

An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A multi-layered capacitor device is provided in which the multi-layered capacitor device includes a metal or metal-oxide ground electrode, a capacitor dielectric layer, a metal or metal-oxide top electrode, a hole blocking layer and an electron blocking layer. The hole blocking layer is located at the interface of the metal or metal-oxide ground electrode and the capacitor dielectric layer to increases the effective barrier height at the interface. The electron blocking layer is located at the interface of the metal or metal-oxide top electrode and the capacitor dielectric layer to increases the effective barrier height at the interface.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula:

D.sub.p-(Core)- H.sub.q,

where Core is a polarizable conductive anisometric core, having conjugated π-systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability.

Modified fluoropolymers, and methods for manufacturing modified fluoropolymers are provided. According to at least one embodiment, chemically modified fluoropolymers, via radical generation and subsequent reaction, produce fluoropolymers having fluorinated moieties and/or non-fluorinated moieties, disrupting highly coherent polar domains, wherein the non-fluorinated moieties include, for example, at least one of carbonyl, hydroxyl, alkoxy, alkyl, and/or aromatic chemical groups.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

The present invention is concerned with a dielectric material comprising a fluoropolymer, wherein at least part of the crystalline region of the fluoropolymer is in the β-phase. The dielectric material of the present invention may show relaxor-like ferroelectricity. The present invention also relates to a novel method of producing such a material, and the use of such a material in a high energy density capacitor. The method comprises layering sheets of PVDF on one another and applying pressure to the multilayer under a temperature which is preferably within 40° C. of the temperature of fusion. Further, the film is preferably quenched.