A dielectric material is provided. The dielectric material includes at least one layer of a substantially continuous phase material. The material is selected from the group consisting of an organic, organometallic, or combination thereof in which the substantially continuous phase material has delocalized electrons.

A film capacitor that includes a resin layer which has a first surface and a second surface and in which there are particles on at least one of the first surface and the second surface; and a metal layer on the first surface of the resin layer, wherein there are more particles in number on the at least one of the first surface and the second surface of the resin layer than inside the resin layer.

A dielectric film is provided. The dielectric film includes a dielectric polymer substrate having two surfaces opposite to each other and a coating layer formed on at least one of the two surfaces of the dielectric polymer substrate by chemical vapor deposition polymerization and/or irradiation polymerization. A power capacitor includes the dielectric film. A process for preparing the dielectric film is provided.

A dielectric film is provided. The dielectric film includes a dielectric polymer substrate having two surfaces opposite to each other and a coating layer formed on at least one of the two surfaces of the dielectric polymer substrate by chemical vapor deposition polymerization and/or irradiation polymerization. A power capacitor includes the dielectric film. A process for preparing the dielectric film is provided.

An amorphous dielectric includes a compound represented by A.sub.1+αBO.sub.xN.sub.y. −0.3≤α≤0.3, 0<x≤3.50, 0≤y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.

An amorphous dielectric includes a compound represented by A.sub.1+αBO.sub.xN.sub.y. −0.3≤α≤0.3, 0<x≤3.50, 0≤y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A complex device is provided. A complex device according to an embodiment of the present invention comprises: a suppressor including a pair of first dielectric sheet layers having a first dielectric constant and a pair of internal electrodes spaced apart from each other on one surface of one of the pair of first dielectric sheet layers; a capacitor including a plurality of second dielectric sheet layers having a second dielectric constant and a plurality of capacitor electrodes provided on each of the plurality of second dielectric sheet layers; and a pair of external terminals provided on both sides of the suppressor and the capacitor to be connected to the plurality of capacitor electrodes and the pair of internal electrodes. Here, provided is the complex device in which the first dielectric constant is greater than the second dielectric constant.

A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a<X1 and X2a≤1000 kJ/mol are satisfied or X2b<X1 and X2b≤1000 kJ/mol are satisfied.