An electrolytic capacitor that includes a resin molding that includes a capacitor element including an anode, a dielectric layer, and a cathode, a sealing resin sealing the capacitor element; a first external electrode on a first end surface of the resin molding; and a second external electrode on a second end surface and connected to the cathode exposed at the second end surface of the resin molding, wherein when viewed in a thickness direction perpendicular to the length direction, the anode includes a first anode region having a first outer edge exposed at the first end surface and connected to the first external electrode, and a second anode region having a second outer edge positioned closest to the second external electrode in the length direction, and a length of the first outer edge is greater than a length of the second outer edge in a width direction.

An electrolytic capacitor that includes a resin molding that includes a capacitor element including an anode, a dielectric layer, and a cathode, a sealing resin sealing the capacitor element; a first external electrode on a first end surface of the resin molding; and a second external electrode on a second end surface and connected to the cathode exposed at the second end surface of the resin molding, wherein when viewed in a thickness direction perpendicular to the length direction, the anode includes a first anode region having a first outer edge exposed at the first end surface and connected to the first external electrode, and a second anode region having a second outer edge positioned closest to the second external electrode in the length direction, and a length of the first outer edge is greater than a length of the second outer edge in a width direction.

A method of manufacturing high capacitance anode and cathode films of capacitors is revealed. Perform sputter deposition on a cathode aluminum foil in a vacuum chamber to form a cathode metal layer which is a titanium layer on a surface of the cathode aluminum foil. Then titanium continuously reacts with nitrogen to form cathode columnar crystal deposition on a surface of the cathode metal layer and get a cathode film. Perform sputter deposition on an anode aluminum foil in a vacuum chamber to form an anode metal layer which is a titanium layer on a surface of the anode aluminum foil. Then titanium continuously reacts with oxygen and nitrogen to form anode columnar crystal deposition on a surface of the anode metal layer and get an anode film. Next use the cathode and anode films with high capacitance to form cathode and anode electrodes of the capacitor.

A solid electrolytic capacitor according to one aspect of the present disclosure includes: an anode body made of a valve metal; a dielectric layer formed on the anode body; and a solid electrolyte layer formed on the dielectric layer. The solid electrolyte layer includes: a first conductive polymer layer formed on the dielectric layer and heterogeneously doped with a monomolecular dopant; a block layer formed on the first conductive polymer layer; and a second conductive polymer layer formed on the block layer and composed of a self-doped-type conductive polymer containing a plurality of side chains containing a functional group that can be doped. The block layer blocks a migration of the self-doped-type conductive polymer from the second conductive polymer layer into the first conductive polymer layer and/or a migration of the self-doped-type conductive polymer from the second conductive polymer layer into pores of the porous anode body.

A HfO2-based ferroelectric capacitor and a preparation method therefor, and a HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserting an Al.sub.2O.sub.3 intercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO.sub.2-based ferroelectric capacitor comprises a substrate layer, a lower electrode, a dielectric layer, an Al.sub.2O.sub.3 intercalation layer, an upper electrode and a metal protection layer from bottom to top. The memory window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.

A HfO2-based ferroelectric capacitor and a preparation method therefor, and a HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserting an Al.sub.2O.sub.3 intercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO.sub.2-based ferroelectric capacitor comprises a substrate layer, a lower electrode, a dielectric layer, an Al.sub.2O.sub.3 intercalation layer, an upper electrode and a metal protection layer from bottom to top. The memory window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.

A solid electrolytic capacitor that includes: a capacitor element including an anode body connected to an anode lead, a dielectric layer on a surface of the anode body, and a cathode layer opposite to the anode body via the dielectric layer; an exterior resin covering the capacitor element; a first external electrode terminal on a first outer surface of the exterior resin and electrically connected to the anode body; a second external electrode terminal on a second outer surface of the exterior resin and electrically connected to the cathode layer; and a resin layer having a lower filler content than the exterior resin and covering at least a portion of an outer periphery of the anode lead between the first outer surface of the exterior resin and the anode body.

A solid electrolytic capacitor that includes: a capacitor element including an anode body connected to an anode lead, a dielectric layer on a surface of the anode body, and a cathode layer opposite to the anode body via the dielectric layer; an exterior resin covering the capacitor element; a first external electrode terminal on a first outer surface of the exterior resin and electrically connected to the anode body; a second external electrode terminal on a second outer surface of the exterior resin and electrically connected to the cathode layer; and a resin layer having a lower filler content than the exterior resin and covering at least a portion of an outer periphery of the anode lead between the first outer surface of the exterior resin and the anode body.

Many electronic devices may employ electrolytic polymer capacitors in their power supplies for noise filtering, decoupling/bypassing, frequency conversion and DC-DC and AC-DC conversion. However, some polymer capacitors exhibit an anomalous charging current phenomenon, which may prevent proper charging and cause failure in power circuits of the electronic devices. Disclosed herein are polymer capacitors that have a wide band gap material layer between an insulator/dielectric and a polymer cathode, a charge depletion region in the insulator/dielectric, or both, that may mitigate the anomalous charging current.

Many electronic devices may employ electrolytic polymer capacitors in their power supplies for noise filtering, decoupling/bypassing, frequency conversion and DC-DC and AC-DC conversion. However, some polymer capacitors exhibit an anomalous charging current phenomenon, which may prevent proper charging and cause failure in power circuits of the electronic devices. Disclosed herein are polymer capacitors that have a wide band gap material layer between an insulator/dielectric and a polymer cathode, a charge depletion region in the insulator/dielectric, or both, that may mitigate the anomalous charging current.