Platinum films can be obtained by aerosol assisted chemical vapor deposition (AACVD) using one or more Pt-dialkyldithiocarbamate complexes of formula Pt(S.sub.2CNR.sub.2), wherein R is independently alkyl, aryl, or alkaryl, particularly as single source precursors. Such methods may include heating a substrate to a deposition temperature above 150° C. in a reactor; and introducing into the reactor, at the deposition temperature, an aerosol including a platinum dithiocarbamate compound, salt, and/or solvate thereof, to thereby deposit the platinum layer on the substrate. The Pt(S.sub.2CNR.sub.2)-derived films have well-connected and defect-free surface topography and better catalytic performance, likely due to their high conductivity and reflectivity.

Disclosed herein are precursor compounds, composite electrodes comprising the same, and methods of making and use thereof.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Provided is a separator composition that is capable of forming a separator capable of improving the photoelectric conversion efficiency of a photoelectric conversion element such as a dye-sensitized solar cell without being subjected to firing. Prepared is a separator composition including: at least one type of non-conductor particles selected from the group consisting of polymer particles and ceramic particles; and an ionic polymer, and the ionic polymer having a proportion from 0.1 to 30 parts by weight with respect to 1 part by weight of the non-conductor particles. A membranous separator may be prepared by coating a support with the composition without sintering. The non-conductor particles may be insulating inorganic oxide particles. A photoelectric conversion layer 2 may be stacked on a conductive substrate 1, the membranous separator 3 may be stacked on the photoelectric conversion layer to produce a laminate, and this laminate may be used to fabricate a photoelectric conversion element.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

This disclosure presents methods for vapor deposition of metal halides involving exposure of substrates to vapors of organometallic copper complexes with halosilane vapors. The methods described herein are advantageous for the production of transparent hole conducting layers, e.g., for perovskite solar cells.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.