A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a germanium halide precursor ink. Preparing a germanium halide precursor ink comprises the steps of: introducing a germanium halide into a vessel, introducing a first solvent to the vessel, and contacting the germanium halide with the first solvent to dissolve the germanium halide. The method further comprises depositing the germanium halide precursor ink onto a substrate, drying the germanium halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

Forming a semiconductor device includes forming a first conductive line on a substrate, forming a memory cell including a switching device and a data storage element on the first conductive line, and forming a second conductive line on the memory cell. Forming the switching device includes forming a first semiconductor layer, forming a first doped region by injecting a n-type impurity into the first semiconductor layer, forming a second semiconductor layer thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region, forming a second doped region by injecting a p-type impurity into an upper region of the second semiconductor layer, and forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a P-N junction of the P-N diode in the second semiconductor layer.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A solar cell according to the present embodiment may have a tandem structure comprising a photovoltaic part, wherein the photovoltaic part comprises: a first photovoltaic part comprising: a photovoltaic layer composed of a perovskite compound; and a second photovoltaic part comprising a semiconductor substrate. Here, in the second photovoltaic part, a first semiconductor layer and a second semiconductor layer, which are formed separately from the semiconductor substrate on one side or the other side of the semiconductor substrate, may have different structures from each other.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

An oxide layer (2) of tin or niobium is formed on one surface of a carbon nanotube-containing layer (1) containing carbon nanotubes having an average diameter (Av) and a diameter standard deviation (σ) that satisfy a relationship 0.60>3σ/Av>0.20.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.