Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).

An in-plane sliding parallel capacitive radio frequency (RF) switch includes a substrate, first to third drive components, an insulating layer, and a sliding component. Where a drive voltage is applied between the first and second drive components, the sliding component slides to the top of the first and second drive components; in this case, relatively large capacitance is formed between the first and second drive components and the sliding component, a RF signal is almost completely reflected, and the transmission is cut off. Where the drive voltage is applied between the second and third drive components, the sliding component slides to the top of the second and third drive components; in this case, no facing area between a first drive electrode and the sliding component exists in a vertical direction, the capacitance is rather small, and the RF signal may be transmitted basically without loss.

A device includes a frame including a first end and a second end; a mechanism including a first side that faces the first end of the frame, and a second side that faces the second end of the frame; a first buckling member attached to the first side of the mechanism and the first end of the frame; a second buckling member attached to the second side of the mechanism and the second end of the frame; and at least one actuator that engages the mechanism, the first buckling member, and the second buckling member in a selective sequence causing the mechanism to articulate between the first end and the second end of the frame. Engagement of the first buckling member and the second buckling member by the at least one actuator causes the first buckling member and the second buckling member to buckle and unbuckle in the selective sequence.

A MEMS relay. The MEMS relay includes: a movable switching element, on which a second switching surface is arranged in a first end section; a substrate having a first switching surface arranged thereon, which is designed to interact with the second switching surface; a switching electrode, to which an electrical switching voltage may be applied, the movable switching element being able to bring the second switching surface into contact with the first switching surface by way of an electrostatic force generated by the electrical switching voltage; at least one second compensation surface arranged in an end section of the movable switching element opposite the second switching surface; and a first compensation surface, which is designed to interact with the second compensation surface and is galvanically connected to the first switching surface via a cable.

A switchable subsea connector includes a first connector part, a second connector part removably connected to the first connector part; and a switching unit. The connector parts each include at least one electrical conductor and each switching unit includes at least one individual switching device. Each electrical conductor in at least one connector part is allocated to an individual switching device of the switching unit; wherein each of the individual switching devices includes a micro-electro-mechanical systems (MEMS) switch.

An apparatus is provided that is implemented to enable multiple tests of different types, such as a direct current (DC) test and/or a radio frequency (RF) test of a semiconductor device. The apparatus includes a microelectromechanical systems (MEMS) switch block coupled between the semiconductor device and automatic testing equipment (ATE). The apparatus is configured to enable/disable a DC path or an RF path to switch between a DC test and an RF test without reconfiguring the connections between the semiconductor device and the ATE. The DC path is used to perform a DC contact test for one or more pins of the semiconductor device. The RF path is used to perform an RF test for the semiconductor device.

Described embodiments include a microelectromechanical system (MEMS) array comprising a first MEMS device that includes a first movable electrostatic plate elastically connected to a first structure, the first movable electrostatic plate having a first mass, a first fixed electrostatic plate, and a first drive circuit having a first drive output coupled to the first fixed electrostatic plate. There is a second MEMS device that includes a second movable electrostatic plate elastically connected to a second structure, the second movable electrostatic plate having a second mass that is different than the first mass, a second fixed electrostatic plate, and a second drive circuit having a second drive output coupled to the second fixed electrostatic plate.

A MEMS switch includes: a housing, a switching assembly; a first actuation electrode, a first contact, a second contact, and a second actuation electrode. The switching device has a stress gradient along the thickness direction, such that in response to applying no voltage between the first actuation electrode and the second actuation electrode, the switching assembly contacts with the first contact. In response to applying a first voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly is spaced apart from both the first contact and the second contact. In response to applying a second voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly contacts with the second contact. The first voltage is smaller than the third voltage.

A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer >2) parallel conducting branchesand i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.