H01H1/0094

Electromechanical power switch integrated circuits and devices and methods thereof

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

Laser remote control switching system

A laser remote control switching system comprises a laser source and a control circuit. The control circuit comprises a power, an electronic device, a first electrode, a second electrode, and a photosensitive element electrically connected in sequence to form a loop. Each of the two nanofiber actuators comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Electromechanical relay with deformable conductive beam and drain electrode
11469067 · 2022-10-11 · ·

A micro or nano electromechanical relay device (10) comprising a source electrode (204) an electrically conductive beam (202) comprising an arcuate portion (12a) coupled to the source electrode by an arm portion, first and second drain electrodes (DE1, DE2) and first and second actuator electrodes (AE1, AE2). The arc of the arcuate portion defines a beam axis (BA). The arcuate portion is mounted for pivotal movement about a pivot axis (PA) which is coaxial or generally coaxial with the beam axis.

Scalable nanotube fabrics and methods for making same

The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.

Computation devices and artificial neurons based on nanoelectromechanical systems

Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

Nanowire nanoelectromechanical field-effect transistors

A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.

Phase change nano electro-mechanical relay
11742162 · 2023-08-29 · ·

A MEMS/NEMS actuator based on a phase change material is described in which the volumetric change observed when the phase change material changes from a crystalline phase to an amorphous phase is used to effectuate motion in the device. The phase change material may be changed from crystalline phase to amorphous phase by heating with a heater or by passing current directly through the phase change material, and thereafter quenched quickly by dissipating heat into a substrate. The phase change material may be changed from the amorphous phase to a crystalline phase by heating at a lower temperature. An application of the actuator is described to fabricate a phase change nano relay in which the volumetric expansion of the actuator is used to push a contact across an airgap to bring it into contact with a source/drain.

Electro-thermally actuated mechanical switching device and memory device using same

A switching device in accordance with the present invention includes a first electrode and a second electrode, and the second electrode includes a body part and a cantilever connected to the body part. In addition, one end of a the cantilever comes into contact with the first electrode by an electrostatic force generated by a voltage applied to the first electrode and the second electrode, and the one end of the cantilever is separated from the first electrode due to heat generated by a voltage applied to both ends of the body part. In addition, the second electrode may include a 2-1 electrode, a 2-2 electrode, and an engineered beam connected in between. The engineered beam comes into contact with the first electrode on the basis of thermal expansion due to heat generated by a current flowing between the body part of the 2-1 electrode and the body part of the 2-2 electrode, or is separated from the first electrode on the basis of thermal expansion due to heat generated by a current flowing through both ends of the body parts of the 2-1 electrode and the 2-2 electrode. According to the present invention, it is possible to achieve high-speed operation while having ultralow power, high reliability through exploiting nano thermal actuation method capable of high-speed thermal expansion and actuation at low operation voltage.

PHASE CHANGE NANO ELECTRO-MECHANICAL RELAY
20220020545 · 2022-01-20 ·

A MEMS/NEMS actuator based on a phase change material is described in which the volumetric change observed when the phase change material changes from a crystalline phase to an amorphous phase is used to effectuate motion in the device. The phase change material may be changed from crystalline phase to amorphous phase by heating with a heater or by passing current directly through the phase change material, and thereafter quenched quickly by dissipating heat into a substrate. The phase change material may be changed from the amorphous phase to a crystalline phase by heating at a lower temperature. An application of the actuator is described to fabricate a phase change nano relay in which the volumetric expansion of the actuator is used to push a contact across an airgap to bring it into contact with a source/drain.

Electromechanical Power Switch Integrated Circuits And Devices And Methods Thereof

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.