The present invention relates to a contact finger alignment arrangement (100) to facilitate electrical connections in a switchgear cubicle (102), said contact finger alignment arrangement (100) comprising a first contact finger (104-1) and a second contact finger (104-2) extending parallel to a longitudinal axis (106), each of said contact fingers (104-1,104-2) having a front end (108) defining a contact receiving portion to facilitate longitudinal insertion of a contact arm (114) fixed to said cubicle (102), a coupling portion (118) for mechanically coupling the first contact finger (104-1) and the second contact finger (104-2), and a rear end (112). The rear end (112) of each of said contact fingers (104-1,104-2) is provided with a conical hole (120) converging towards said longitudinal axis (106) for receiving an alignment pin (122) projected through the conical hole (120) of said first contact finger (104-1) to the second contact finger (104-2) such that the resilient rotational motion of the contact fingers (104-1,104-2) is executed in a restricted manner.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

Gas distribution modules comprising a housing with an upper plenum and a lower plenum are described. One of the upper plenum and lower plenum is in fluid communication with an inlet and the other is in fluid communication with an outlet. A plurality of upper passages connects the upper plenum to the bottom of the housing to allow a flow of gas to pass through and be isolated from the first plenum.

In a switch in which one end portion of a blade is pivotally attached to a fixed contactor and another end portion of the blade is brought into pressure contact with a fixed contactor by rotational operation of the blade, at least one slit is provided in each of a conductive contact surface, with respect to the fixed contactor, of the one end portion of the blade and a conductive contact surface, with respect to the fixed contactor, of the other end portion of the blade, so as to divide each of the conductive contact surfaces, thereby achieving multi-point contact on each of the conductive contact surfaces, and a thickness of a contact-pressure spring fixing portion of the blade at which a contact-pressure spring for bringing the other end portion into pressure contact with the fixed contactor is made smaller than that of the other end portion.

A medium or high voltage switch including a moveable contact element and a stationary contact element is described. Therein, a moveable-contact guiding portion of the moveable contact element and a stationary-contact guiding portion of the stationary contact element are shaped for establishing a spherical-bearing-type mechanical connection between each other, thereby aligning a center of the moveable-contact guiding portion with a center of the stationary-contact guiding portion while allowing an angular flexion between the moveable and stationary contact elements. Furthermore, at least one of the stationary-contact guiding portion and the moveable-contact guiding portion is electrically insulating.

A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.